ZX5T869G
25V NPN LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BV
CEO
= 25V : R
SAT
= 27m ; I
C
= 7A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 25V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
•
Extemely low equivalent on-resistance;
R
SAT
= 27m at 6.5A
•
7 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent h
FE
characteristics up to 20 amps
SOT223
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZX5T869GTA
ZX5T869GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
embossed
QUANTITY PER
REEL
1000 units
4000 units
DEVICE MARKING
•
X5T869
TOP VIEW
ISSUE 1 - NOVEMBER 2003
1
SEMICONDUCTORS
ZX5T869G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
(b)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
LIMIT
60
25
7.5
7
20
3.0
24
1.6
12.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
42
78
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
2
ZX5T869G
CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
3
SEMICONDUCTORS
ZX5T869G
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
26
51
98
173
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
300
300
200
40
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
1010
885
400
450
300
90
150
48
33
464
300 s; duty cycle
2%.
pF
ns
MIN.
60
60
25
7.5
TYP.
105
105
35
8.2
20
0.5
20
0.5
10
40
65
80
150
220
1080
980
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
I
C
=100 A
I
C
=1 A, RB 1k
I
C
=10mA*
I
E
=100 A
V
CB
=50V
V
CB
=50V, T
amb
=100 C
V
CB
=50V
V
CB
=50V, T
amb
=100 C
V
EB
=6V
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
I
C
=6.5A, I
B
=150mA*
I
C
=6.5A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
I
C
=100mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
4
ZX5T869G
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
5
SEMICONDUCTORS
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