ZX5T949Z
MPPS™ 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
IN SOT89
SUMMARY
BV
CEO
= -30V : R
SAT
= 24m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation
low saturation 30V PNP transistor offers low on state
losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management
functions.
SOT89
FEATURES
•
5.5 Amps continuous current
•
Up to 20 Amps peak current
•
Very low saturation voltages
•
Exceptional gain linearity down to 10mA
•
Excellent high current gain hold up
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
7"
TAPE WIDTH
12mm
embossed
QUANTITY PER
REEL
1000 units
ZX5T949ZTA
DEVICE MARKING
•
949
TOP VIEW
ISSUE 3 - DECEMBER 2004
1
SEMICONDUCTORS
ZX5T949Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
LIMIT
-50
-30
-7
-5.5
-20
1.5
12
2.1
16.8
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
83
60
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 3 - DECEMBER 2004
SEMICONDUCTORS
2
ZX5T949Z
CHARACTERISTICS
ISSUE 3 - DECEMBER 2004
3
SEMICONDUCTORS
ZX5T949Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
SYMBOL
BV
CBO
MIN.
-50
-50
-30
-7.0
TYP.
-70
-70
-40
-8.0
<-1
-20
-0.5
Collector cut-off current
I
CER
R <1k
Emitter cut-off current
Collector-emitter saturation voltage
I
EBO
V
CE(SAT)
<-1
-25
-35
-55
-55
-130
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
100
100
70
10
Transition frequency
f
T
C
OBO
t
ON
t
OFF
NOTES
* Measured under pulsed conditions. Pulse width
MAX.
UNIT
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS
I
C
= -100 A
I
C
= -1 A, RB <1k
I
C
= -10mA *
I
E
= -100 A
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
V
CB
= -40V
V
CB
= -40V,T
amb
=100°C
V
EB
= -6V
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
=-500mA *
I
C
= -5.5A, I
B
= -500mA *
I
C
= -5.5A, V
CE
= -1V *
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
Collector-emitter breakdown voltage BV
CER
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector cut-off current
BV
EBO
I
CBO
<-1
-20
-0.5
-10
-40
-55
-80
-80
-175
-1070
-960
-970
-860
225
200
145
20
110
300
MHz
I
C
= -100mA, V
CE
= -10V
f = 50MHz
V
CB
= -10V, f = 1MHz *
I
C
= -1A, V
CC
= -10V,
I
B1
= -I
B2
= -100mA
Output capacitance
Switching times
83
43
230
pF
ns
300 s; duty cycle
2%.
ISSUE 3 - DECEMBER 2004
SEMICONDUCTORS
4
ZX5T949Z
TYPICAL CHARACTERISTICS
ISSUE 3 - DECEMBER 2004
5
SEMICONDUCTORS
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