ZXGD3002E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation
delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3002E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
•
•
•
20V operating voltage range
9 Amps peak output current
Fast switching emitter-follower configuration
• 2ns propagation delay time
• 11ns rise/fall time, 1000pF load
Low input current requirement
• 2.2A(source)/2.0A(sink) output current from 10mA input
SOT23-6 package
Separate source and sink outputs for independent control of rise and fall time
Optimized pin-out to ease board layout and minimize trace inductance
No Latch Up
No shoot through
Near - Zero quiescent and output leakage current
•
•
•
•
•
•
•
Typical application circuit
V
S
V
CC
V
CC
IN
1
SOURCE
Input
IN
2
ZXGD3002
SINK
GND
Issue 1 - October 2007
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ZXGD3002E6
Applications
Power MOSFET and IGBT Gate Driving in
•
•
•
•
•
Synchronous switch-mode power supplies
Secondary side synchronous rectification
Plasma Display Panel power modules
1, 2 and 3-phase motor control circuits
Audio switching amplifier power output stages
Pin configuration
Pin
Name
V
CC
IN
1
/ IN
2
GND
SINK
Pin Function
Driver supply
Driver input pins. These are normally
connected together by circuit tracks
Ground
Sink current output
V
CC
IN
1
GND
SOT236
Top view
SOURCE
IN
2
SINK
SOURCE Source current output
Ordering information
DEVICE
ZXGD3002E6TA
Reel size
(inches)
7
Tape width
(mm)
8 embossed
Quantity
per reel
3000
Device marking
3002
Issue 1 - October 2007
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ZXGD3002E6
Absolute maximum ratings
Parameter
Supply voltage
Input voltage
Peak sink current
(c)
Source current @ I
IN1
+ I
IN2
=10mA
(a)
Sink current @ I
IN1
+ I
IN2
=10mA
(a)
Input current
(c)
Power dissipation at T
A
=25°C
(a)(b)
Linear derating factor
Operating and storage temperature range
Symbol
V
CC
V
IN
I
(sink)PK
I
(source)
I
(sink)
I
IN1
, I
IN2
P
D
T
j
, T
stg
Limit
20
20
9
2.2
2
1
1.1
8.8
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)(b)
Symbol
R
JA
Value
113
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300 s limit repetition rate to comply with maximum junction temperature.
Issue 1 - October 2007
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ZXGD3002E6
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Output voltage, high
Output voltage, low
Source output leakage
current
Sink output leakage
current
Quiescent current
Source output current
Sink output current
Source output current
Sink output current
Gate driver
switching times
Symbol
V
OH
V
OL
I
L(source)
I
L(sink)
I
Q
I
(source)
I
(sink)
I
(source)PK
I
(sink)PK
t
d(rise)
t
r
t
d(fall)
t
f
t
d(rise)
t
r
t
d(fall)
t
f
1.6
1.4
2.2
2.0
9
9
1.25
8.3
1.6
10.8
3.6
105
6.9
115
Min.
Typ.
V
CC
–
0.4
0.4
1
1
50
Max.
Unit
V
V
A
A
nA
A
A
A
A
ns
ns
ns
ns
ns
ns
ns
ns
Conditions
I
SOURCE
= 1 A
I
SINK
= 1 A
V
CC
= 20V,
V
IN1
= V
IN2
= 0V
V
CC
= 20V,
V
IN1
= V
IN2
= V
CC
V
CC
= 16V,
V
IN1
= V
IN2
= 0V
I
IN1
+ I
IN2
= 10mA
I
IN1
+ I
IN2
= 10mA
I
IN1
+ I
IN2
= 1A
I
IN1
+ I
IN2
= 1A
C
L
=1nF, R
L
=1 ,
V
CC
=12V, V
IN
=10V,
R
S
=25
C
L
=1nF, R
L
=1 ,
V
CC
=12V, V
IN
=10V,
R
S
=1k
Gate driver
switching times
Switching Time Test Circuits
Timing Diagram
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
4
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