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ZXM66P02N8_15

Description
20V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size619KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

ZXM66P02N8_15 Overview

20V P-CHANNEL ENHANCEMENT MODE MOSFET

A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
V
(BR)DSS
-20V
R
DS(on)
0.025Ω
I
D
-8.0A
Features and Benefits
High pulse current handling in linear mode
Low on-resistance
Fast switching speed
Low gate drive
Low profile SOIC package
Description and Applications
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
Inrush protection circuits
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Mechanical Data
Case: SO-8
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D
G
S
Top View
Top View
Equivalent Circuit
Ordering Information
Product
ZXM66P02N8TA
Notes:
(Note 1)
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
1. For packaging details, go to our website.
Marking Information
ZXM
66P02
YYWW
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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