ZXMD63N02X
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
130mΩ @ V
GS
= 4.5V
20V
150mΩ @ V
GS
= 2.7V
MSOP-8
2.3A
Package
I
D
T
A
= +25°C
(Notes 5 & 6)
2.5A
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: MSOP-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
e3
Weight: 0.008 grams (approximate)
Applications
•
•
•
•
DC-DC Converters
Power Management functions
Motor Control
Disconnect Switches
MSOP8
•
•
•
Device Symbol
Top View
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZXMD63N02XTA
ZXMD63N02XTC
Notes:
Marking
ZXM63N02
ZXM63N02
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXM63N02 = Product type Marking Code
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
1 of 8
www.diodes.com
June 2012
© Diodes Incorporated
ZXMD63N02X
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Steady
State
@ V
GS
= 10V; T
A
= +25°C (Note 5 & 6)
@ V
GS
= 10V; T
A
= +70°C (Note 5 & 6)
@ V
GS
= 10V; T
A
= +100°C (Note 5 & 6)
(Notes 6 & 7)
(Notes 5 & 6)
(Notes 6 & 7)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
Value
20
±12
2.5
1.9
0.78
19
1.5
19
Unit
V
V
A
A
A
A
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
Characteristic
Power Dissipation
(Notes 6 & 8)
(Notes 5 & 6)
(Notes 8 & 9)
(Notes 6 & 8)
(Notes 5 & 6)
(Notes 8 & 9)
(Note 10)
Symbol
P
D
Value
0.87
1.25
1.04
143
100
120
84.9
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
R
θJA
R
θJL
T
J
,
T
STG
°C/W
°C/W
°C
5. For a device surface mounted on FR4 PCB measured at t
≤
10 sec.
6. For device with one active die.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature.
8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
9. For device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
2 of 8
www.diodes.com
June 2012
© Diodes Incorporated
ZXMD63N02X
Thermal Characteristics
I
D
Drain Current (A)
10
R
DS(on)
Limited
Max Power Dissipation (W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
100m
10m
100m
V
DS
Drain-Source Voltage (V)
1
10
Temperature (°C)
Safe Operating Area
150
Derating Curve
Thermal Resistance (°C/W)
125
100
75
50
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
Maximum Power (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
10
25
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
3 of 8
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June 2012
© Diodes Incorporated
ZXMD63N02X
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transconductance (Notes 11 & 13)
Diodes Forward Voltage (Note 11)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 12 & 13)
Output Capacitance (Notes 12 & 13)
Reverse Transfer Capacitance (Notes 12 & 13)
Gate Resistance (Notes 12 & 13)
Total Gate Charge (Notes 12 & 13)
Gate-Source Charge (Notes 12 & 13)
Gate-Drain Charge (Notes 12 & 13)
Reverse Recovery Time (Note 13)
Reverse Recovery Charge (Note 13)
Turn-On Delay Time (Notes 12 & 13)
Turn-On Rise Time (Notes 12 & 13)
Turn-Off Delay Time (Notes 12 & 13)
Turn-Off Fall Time (Notes 12 & 13)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
rr
Q
rr
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.7
-
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
65
90
-
0.85
350
120
50
3.8
4.5
0.5
2
15
5.9
3.4
8.1
13.5
9.1
Max
-
1.0
100
3
130
150
-
0.95
700
250
100
7.6
6
0.65
2.5
30
-
-
-
-
-
Unit
V
µA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 1.7A
V
GS
= 2.7V, I
D
= 0.85A
V
DS
= 10V, I
D
= 0.85A
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
f = 1MHz, V
GS
= 0V, V
DS
= 0V
V
GS
= 4.5V, V
DS
= 16V,
I
D
= 1.7A
T
J
= +25°C, I
F
= 1.7A,
di/dt = 100A/µs
V
DD
= 10V, I
D
= 1.7A,
R
G
= 6Ω, R
D
= 5.7Ω,
pF
Ω
nC
ns
nC
ns
11. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤2%.
12. Switching characteristics are independent of operating junction temperature.
13. For design aid only, not subject to production testing.
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
4 of 8
www.diodes.com
June 2012
© Diodes Incorporated
ZXMD63N02X
Typical Characteristics
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
5 of 8
www.diodes.com
June 2012
© Diodes Incorporated
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