ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(on)
250mΩ @ V
GS
= 10V
300mΩ @ V
GS
= 6V
Max I
D
T
A
= 25C
(Note 5)
1.9A
1.68A
Features and Benefits
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
100V
Description and Applications
This MOSFET features a unique structure, combining the benefits of
low on-resistance and fast switching, making it ideal for high-
efficiency, power management applications.
DC - DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
SOT26
Top View
Pinout Top-view
Device symbol
Ordering Information
(Note 4)
Part Number
ZXMN10A08E6TA
ZXMN10A08E6TC
Notes:
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT26
10A8
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
10A8 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
March 2015
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 9 – 2
1 of 7
www.diodes.com
© Diodes Incorporated
ZXMN10A08E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
Note 5)
T
A
=+70C (Note 5)
(Note 4)
(Note 7)
(Note 6)
(Note 5)
(Note 6)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
100
20
1.9
1.5
1.5
3.5
8.6
2.5
8.6
Unit
V
V
A
A
A
A
NEW PRODUCT
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
Symbol
(Note 4)
(Note 5)
(Note 7)
(Note 4)
(Note 5)
(Note 7)
P
D
R
JA
R
JL
T
J
, T
STG
Value
1.1
1.7
6.3
114
73.5
19.7
-55 to +150
Unit
W
C/W
C/W
C
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
10
R
DS(on)
1.2
Max Power Dissipation (W)
I
C
Drain Current (A)
Limited
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
Single Pulse
T
amb
=25°C
100m
1
10
100
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
120
Derating Curve
Thermal Resistance (°C/W)
80
60
40
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.5
Maximum Power (W)
100
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
10
20
100µ
1m
10m 100m
1
1
100µ
1m
10m 100m
1
10
100
1k
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 9 – 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A08E6
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Min
100
2.0
Typ
5.0
0.87
27
32
405
28.2
14.2
4.2
7.7
1.8
2.1
3.4
2.2
8
3.2
Max
0.5
100
4.0
0.25
0.30
0.95
Unit
V
A
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= 250µA, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= 250µA, V
DS
= V
GS
V
GS
= 10V, I
D
= 3.2A
V
GS
= 6V, I
D
= 2.6A
V
DS
= 15V, I
D
= 3.2A
I
S
= 3.2A, V
GS
= 0V
I
S
= 1.2A, di/dt = 100A/µs
NEW PRODUCT
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
V
DS
= 50V, V
GS
= 0V
f = 1MHz
V
GS
= 5V, V
DS
= 50V
I
D
= 1.2A
V
GS
= 10V, V
DS
= 50V
I
D
= 1.2A
V
DD
= 30V, V
GS
= 10V
I
D
= 1.2A, R
G
6.0Ω
8. Measured under pulsed conditions. Width
≤300μs.
Duty cycle
≤2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 9 – 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A08E6
Typical Characteristics
NEW PRODUCT
10
T = 25°C
10V
10
T = 150°C
10V
5V
4.5V
I
D
Drain Current (A)
5V
1
4.5V
4V
I
D
Drain Current (A)
1
4V
3.5V
0.1
V
GS
3.5V
0.1
3V
V
GS
0.01
0.1
1
10
0.01
0.1
1
10
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Output Characteristics
2.0
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
V
DS
= 10V
V
GS
= 10V
I
D
= 3.2A
R
DS(on)
I
D
Drain Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
T = 150°C
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
0.1
T = -55°C
3
4
5
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
100
V
GS
4V
4.5V
Normalised Curves v Temperature
10
I
SD
Reverse Drain Current (A)
3.5V
T = 25°C
T = 150°C
10
5V
1
T = 25°C
1
10V
0.1
0.1
0.01
0.01
0.1
1
10
0.4
0.6
0.8
1.0
On-Resistance v Drain Current
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 9 – 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A08E6
Typical Characteristics
(continued)
NEW PRODUCT
600
10
f = 1MHz
C Capacitance (pF)
500
400
C
ISS
V
GS
Gate-Source Voltage (V)
V
GS
= 0V
I
D
= 1.2A
8
6
4
2
V
DS
= 50V
300
200
100
0
0.1
1
C
OSS
C
RSS
10
100
0
0
1
2
3
4
5
6
7
8
V
DS
- Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 9 – 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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