OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
MPPS™ Miniature Package Power Solutions
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.12 ; I
D
= 3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 20V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3x2mm Dual Die MLP
FEATURES
•
Low On - Resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
3mm x 2mm MLP
APPLICATIONS
•
DC-DC Converters
•
Power Management Functions
•
Disconnection switches
•
Motor Control
PINOUT
7
ORDERING INFORMATION
DEVICE
ZXMN2AM832TA
ZXMN2AM832TC
REEL
7
’‘
13’‘
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
DNA
ISSUE 3 - JANUARY 2005
1
SEMICONDUCTORS
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V; T
A
=25 C
@V
GS
=10V; T
A
=70 C
(b) (f)
@V
GS
=10V; T
A
=25 C
Pulsed Drain Current
Continuous Source Current (Body Diode)
(b) (f)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C
(a) (f)
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
(b) (f)
(a) (f)
(b) (f)
SYMBOL
V
DSS
V
GS
I
D
N-Channel
20
12
3.7
3.0
2.9
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
P
D
P
D
P
D
P
D
T
j
:T
stg
13
3.0
13
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
(c) (f)
Power Dissipation at TA=25°C (
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
d) (f)
(d) (g)
Power Dissipation at TA=25°C
(e) (g)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL
R
JA
R
JA
R
JA
R
JA
R
JA
R
JA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 3 - JANUARY 2005
SEMICONDUCTORS
2
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
20
1
100
0.7
0.09
0.12
0.30
V
A
nA
V
I
D
=250 A, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I =250 A, V
DS
=V
GS
D
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=1.5A
S
V
DS
=10V,I
D
=4A
Forward Transconductance
(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
g
fs
6.2
C
iss
C
oss
C
rss
299
60
33
pF
pF
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.31
2.60
1.55
1.31
3.1
0.7
1.0
ns
ns
ns
ns
nC
nC
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=4A
V
DD
=10V, I
D
=4A
R
G
≅6.0
, V
GS
=5V
V
SD
0.9
0.95
V
T
J
=25°C, I
S
=3.2A,
V
GS
=0V
T
J
=25°C, I
F
=4A,
di/dt= 100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
23
5.65
ns
nC
NOTES
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - JANUARY 2005
SEMICONDUCTORS
4
Embedded System
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