ZXMN3A03E6_15 datasheet, PDF - EEWORLD Datasheet

ZXMN3A03E6

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

30V

Max R

DS(ON)

0.050 @ V

GS

= 10V

Max I

D

T

A

= +25C

4.6A

Features and Benefits



Low On-resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

NEW PRODUCT

Description and Applications

This new generation of TRENCH MOSFET from Zetex utilizes a

unique structure that combines the benefits of low on-resistance with

fast switching speed. This makes them ideal for high efficiency, low

voltage, power management applications.



DC - DC converters



Power Management Functions



Disconnect Switches



Motor Control

Mechanical Data



Case: SOT26

Case Material: Molded Plastic, ―Green‖ Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.015 grams (Approximate)

SOT26

Top View

Pinout Top-view

Device Symbol

Ordering Information

(Note 4)

Part Number

ZXMN3A03E6TA

ZXMN3A03E6TC

Notes:

Reel Size (inch)

7

13

Tape Width (mm)

8

Quantity Per Reel

3000

10,000

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

3A3

3A3 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: C = 2015)

M or M = Month (ex: 9 = September)

Date Code Key

Year

2015

Code

C

Month

Code

Jan

1

2016

D

Feb

2

2017

E

Mar

3

2018

F

Apr

4

YM

2019

G

May

5

2020

H

Jun

6

2021

I

Jul

7

Aug

8

2022

J

Sep

9

2023

K

Oct

O

2024

L

Nov

N

2025

M

Dec

D

March 2015

ZXMN3A03E6

Datasheet Number: DS33531 Rev. 4 - 2

1 of 7

www.diodes.com

ZXMN3A03E6

Maximum Ratings

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V

GS

= 10V

T

A

= +25C (Note 6)

T

A

= +70C (Note 6)

T

A

= +25C (Note 5)

Symbol

V

DSS

V

GS

I

D

I

DM

I

S

I

SM

Value

30

20

4.6

3.7

17

2.6

17

Unit

V

A

NEW PRODUCT

Pulsed Drain Current (Note 7)

Continuous Source Current (Body Diode)

(Note 6)

Pulsed Source Current (Body Diode)

(Note 7)

Thermal Characteristics

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Power Dissipation at T

A

= +25C (Note 5)

Linear derating factor (Note 5)

Power Dissipation at T

A

= +25C (Note 6)

Linear derating factor (Note 6)

Junction to Ambient (Note 5)

Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Notes:

Symbol

P

D

P

D

R



JA

R



JA

T

J

, T

STG

Value

1.1

8.8

1.7

13.6

113

73

-55 to +150

Unit

W

mW/C

W

mW/C

C/W

C/W

C

5.

For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6.

For a device surface mounted on FR-4 PCB measured at t≦10 secs.

7.

Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10µs - pulse width limited by maximum junction temperature. Refer to Transient

Thermal Impedance graph.

Thermal Characteristics

ZXMN3A03E6

Datasheet Number: DS33531 Rev. 4 - 2

2 of 7

www.diodes.com

March 2015

ZXMN3A03E6

Electrical Characteristics

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

OFF CHARACTERISTICS

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-body Leakage

ON CHARACTERISTICS

Gate-source Threshold Voltage

Static Drain-source On-state Resistance (Note 8)

Forward Transconductance (Notes 8 & 10)

Diode Forward Voltage (Note 8)

DYNAMIC CHARACTERISTICS

(Notes 9 & 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Charge

Total Gate Charge

Gate-source Charge

Gate-drain Charge

Reverse Recovery Time (Note 10)

Reverse Recovery Charge (Note 10)

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Notes:

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

g

fs

V

SD

C

iss

C

oss

C

rss

Q

g

Q

g

Q

gs

Q

gd

t

rr

Q

rr

t

d(on)

t

r

t

d(off)

t

f

Min

30

—

1

—

—

—

—

—

Typ

—

10

0.85

600

104

58.5

6.9

12.6

2.0

18.8

14.1

2.9

6.4

16.0

11.2

Max

—

0.5

100

—

0.050

0.065

—

0.95

—

—

—

Unit

V

A

nA

V

Ω

S

V

pF

nC

ns

nC

ns

Test Condition

I

D

= 250A, V

GS

= 0V

V

DS

= 30V, V

GS

= 0V

V

GS

=

20V,

V

DS

= 0V

I

D

= 250A, V

DS

= V

GS

V

GS

= 10V, I

D

= 7.8A

V

GS

= 4.5V, I

D

= 6.8A

V

DS

= 10V, I

D

= 7.8A

T

J

= +25°

, I

S

= 3.2A, V

GS

= 0V

C

V

DS

= 25V, V

GS

= 0V

f = 1MHz

V

GS

= 5V, V

DS

= 15V

I

D

= 3.5A

V

GS

= 10V, V

DS

= 15V

I

D

= 3.5A

T

J

= +25° I

F

=3.5A,

C,

di/dt= 100A/μs

V

DD

= 15V, V

GS

= 10V

I

D

= 3.5A, R

G

= 6.0

NEW PRODUCT

8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.

9. Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

ZXMN3A03E6

Datasheet Number: DS33531 Rev. 4 - 2

3 of 7

www.diodes.com

March 2015

ZXMN3A03E6

Typical Characteristics

NEW PRODUCT

ZXMN3A03E6

Datasheet Number: DS33531 Rev. 4 - 2

4 of 7

www.diodes.com

March 2015

ZXMN3A03E6

Typical Characteristics

(Cont.)

NEW PRODUCT

Test Circuits

ZXMN3A03E6

Datasheet Number: DS33531 Rev. 4 - 2

5 of 7

www.diodes.com

March 2015

ZXMN3A03E6_15

ZXMN3A03E6_15 Overview

Preview

Recommended Resources