ZXMN7A11GTC datasheet, PDF - EEWORLD Datasheet

Green

ZXMN7A11G

70V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

70V

R

DS(on) max

0.13Ω @ V

GS

= 10V

I

D

T

A

= +25°C

3.8A

Features and Benefits



Low On-Resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low

voltage power management applications.

Mechanical Data



Case: SOT223

Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram Below

Terminals: Finish - Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

Weight: 0.112 grams (Approximate)

Applications



DC-DC Converters

Power Management Functions

Disconnect Switches

Motor Control

Class D Audio Output Stages

SOT223

D

G

S

Top View

Pin Out - Top View

Equivalent Circuit

Ordering Information

(Note 4)

Part Number

ZXMN7A11GTA

ZXMN7A11GTC

Notes:

Qualification

Standard

Case

SOT223

Packaging

1,000 / Tape & Reel

4,000 / Tape & Reel

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

ZXMN

7A11

ZXMN 7A11 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5= 2015)

WW or WW = Week Code (01~53)

YWW

ZXMN7A11G

Document number: DS33562 Rev. 2 - 2

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March 2015

ZXMN7A11G

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V

DSS

V

G

T

A

= +25°C (Note 6)

T

A

= +70°C (Note 6)

T

A

= +25°C (Note 5)

I

D

I

S

I

DM

I

SM

Value

70

20

3.8

3.0

2.7

5

10

Units

V

A

NEW PRODUCT

Gate-Source Voltage

Continuous Drain Current, V

GS

= 10V,

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current

Pulsed Source Current (Body Diode)

Thermal Resistance

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation at

T

A

= +25°C

(Note 5)

Linear Derating Factor (Note 5)

Total Power Dissipation at

T

A

= +25°C

(Note 6)

Linear Derating Factor (Note 6)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Notes:

Symbol

P

D

P

D

R



JA

R



JA

T

J,

T

STG

Value

2.0

16

3.9

31

62.5

32

-55 to +150

Units

W

mW/°C

W

mW/°C

°C/W

°C

5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. For a device surface mounted on FR4 PCB measured at t



5 sec.

7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.

ZXMN7A11G

Document number: DS33562 Rev. 2 - 2

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March 2015

ZXMN7A11G

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

NEW PRODUCT

ZXMN7A11G

Document number: DS33562 Rev. 2 - 2

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ZXMN7A11G

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(@T

A

= +25°C, unless otherwise specified.)

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

g

fs

V

SD

C

iss

C

oss

C

rss

Q

g

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Min

70

—

1.0

—

Typ

—

4.66

0.85

298

35

21

4.35

7.4

1.06

1.8

1.9

2

11.5

5.8

19.8

14

Max

—

1

±100

—

0.13

0.19

—

0.95

—





ns

nC

T

J

= +25°C, IS = 2.5A,

dI/dt = 100A/μs

ns

V

DS

= 35V, V

GS

= 10V,

I

D

= 1 AR

G



6.0Ω

nC

V

DS

= 35V, V

GS

= 10V, I

D

= 4.4A

nC

pF

V

DS

= 50V, V

GS

= 0V

f = 1.0MHz

V

DS

= 35V, V

GS

= 5.0V, I

D

= 4.4A

Unit

V

µA

nA

V

Ω

S

V

Test Condition

V

GS

= 0V, I

D

= 250µA

V

DS

= 70V, V

GS

= 0V

V

GS

=

20V,

V

DS

= 0V

V

DS

= V

GS

, I

D

= 250µA

V

GS

= 10V, I

D

= 4.4A

V

GS

= 4.5V, I

D

= 3.8A

V

DS

= 15V, I

D

= 4.4A

T

J

= +25°C , V

GS

= 0V, I

S

= 2.5A

NEW PRODUCT

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 8)

Forward Transfer Admittance

Diode Forward Voltage (Note 8)

DYNAMIC CHARACTERISTICS (Notes 9 &10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes:

8. Measured under pulsed conditions. Pulse width



300µs; duty cycle



2%.

9 .Switching characteristics are independent of operating junction temperature.

10. For design aid only, not subject to production testing.

ZXMN7A11G

Document number: DS33562 Rev. 2 - 2

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March 2015

ZXMN7A11G

Typical Characteristics

NEW PRODUCT

ZXMN7A11G

Document number: DS33562 Rev. 2 - 2

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ZXMN7A11GTC

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