ZXMP2120E5_15 datasheet, PDF - EEWORLD Datasheet

ZXMP2120E5

200V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

28Ω @ V

GS

= 10V

I

D

T

A

= +25°C

-122mA

Features and Benefits



High Voltage

Low On-Resistance

Fast Switching Speed

Low Gate Drive

Low Threshold

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

-200V

Description

This new generation trench MOSFET features a unique structure

combining the benefits of low on-resistance and fast switching,

making it ideal for high-efficiency power management applications.

Mechanical Data



Case: SOT25

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish

Weight: 0.016 grams (Approximate)

Applications



Active Clamping of Primary Side MOSFETs in 48 Volt DC-DC

Converters

D

SOT25

G

S

Top View

Pin Out - Top

View

Equivalent Circuit

Ordering Information

(Note 4)

Part Number

ZXMP2120E5TA

Notes:

Marking

P120

Reel size (inches)

7

Tape width (mm)

8

Quantity per reel

3,000

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT25

P120

P120 = Product Type Marking Code

ZXMP2120E5

Document number: DS33600 Rev. 3 - 2

1 of 7

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ZXMP2120E5

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (V

GS

= 10V; T

A

= +25°C) (Note 5)

Pulsed Drain Current (Note 6)

Pulsed Source Current (Body Diode) (Note 6)

Symbol

V

DSS

V

GSS

I

D

I

DM

I

SM

Value

-200

±20

-122

-0.7

Unit

V

mA

A

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Power Dissipation at T

A

= +25°C (Note 5)

Linear Derating Factor

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Symbol

P

D

R

θJA

T

J

,

T

STG

Value

0.75

6

167

-55 to +150

Unit

W

mW/°C

°C/W

°C

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

(@T

A

= +25°C, unless otherwise specified.)

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(TH)

R

DS(ON)

g

fs

I

D(ON)

C

iss

C

oss

C

rss

t

D(ON)

t

R

t

D(OFF)

t

F

Min

-200

-

-1.5

-

50

-300

-

Typ

-

Max

-

-10

-100

20

-3.5

28

-

100

25

7

15

12

15

Unit

V

µA

nA

V

Ω

mS

mA

pF

ns

Test Condition

V

GS

= 0V, I

D

= -1mA

V

DS

= -200V, V

GS

= 0V

V

DS

= -160V, V

GS

= 0V, T = +125°C

V

GS

= ±20V, V

DS

= 0V

V

DS

= V

GS

, I

D

= -1mA

V

GS

= -10V, I

D

= -150mA

V

DS

= -25V, I

D

= -150mA

V

DS

= -25V,

V

GS

=

-10V

V

DS

= -25V, V

GS

= 0V,

f = 1.0MHz

Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 7)

Forward Transconductance (Notes 7 & 8)

On-State Drain Current (Note 7)

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 8)

Output Capacitance (Note 8)

Reverse Transfer Capacitance (Note 8)

Turn-On Delay Time (Notes 8 & 9)

Turn-On Rise Time (Notes 8 & 9)

Turn-Off Delay Time (Notes 8 & 9)

Turn-Off Fall Time (Notes 8 & 9)

Notes:

V

DD

= -25V, I

D

= -150mA

5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

8. Sample test.

9. Switching characteristics are independent of operating junction temperature.

ZXMP2120E5

Document number: DS33600 Rev. 3 - 2

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May 2015

ZXMP2120E5

V

DS

- Drain Source Voltage (Volts)

Saturation Characteristics

ZXMP2120E5

Document number: DS33600 Rev. 3 - 2

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May 2015

ZXMP2120E5

Capacitance v drain-source voltage

ZXMP2120E5

Document number: DS33600 Rev. 3 - 2

4 of 7

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May 2015

ZXMP2120E5

Thermal Characteristics

ZXMP2120E5

Document number: DS33600 Rev. 3 - 2

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May 2015

ZXMP2120E5_15

ZXMP2120E5_15 Overview

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