ZXMP6A17G
Green
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
BV
DSS
-60V
R
DS(on)
125mΩ @ V
GS
= -10V
190mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°C
-4.3A
-3.5A
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.112 grams (Approximate)
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
SOT223
D
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMP6A17GTA
ZXMP6A17GTC
Note:
Case
SOT223
SOT223
Packaging
1,000/Tape & Reel
4,000/ Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZXMP6A17 = Product Type Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 5 = 2015)
WW or WW = Week (01 - 53)
ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
1 of 8
www.diodes.com
February 2015
© Diodes Incorporated
ZXMP6A17G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
(Note 6)
Continuous Drain Current
Pulsed Drain Current
V
GS
= 10V
V
GS
= 10V
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
I
DM
I
S
I
SM
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
I
D
Value
-60
20
-4.3
-3.5
-3.0
-13.7
-4.8
-13.7
A
A
A
A
Unit
V
V
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
(Note 6)
(Note 5)
(Note 6)
(Note 8)
R
θJA
R
θJL
T
J
, T
STG
Symbol
Value
2.0
16
3.9
31
62.5
32.0
9.8
-55 to +150
°C
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
°C/W
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t
10sec.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
2 of 8
www.diodes.com
February 2015
© Diodes Incorporated
ZXMP6A17G
Thermal Characteristics
ADVANCE INFORMATION
-I
D
Drain Current (A)
10
R
DS(on)
Limited
Max Power Dissipation (W)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
40
60
80
25mm x 25mm
1oz FR4
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
100m
10m
-V
DS
Drain-Source Voltage (V)
1
10
100
100 120 140 160
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
T
amb
=25°C
Derating Curve
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
10
Pulse Width (s)
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
3 of 8
www.diodes.com
February 2015
© Diodes Incorporated
ZXMP6A17G
Electrical Characteristics
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
-1.0
Typ
0.096
0.120
4.7
-0.85
25.1
27.2
637
70.0
53.0
9.0
17.7
1.6
4.4
2.6
3.4
26.2
11.3
Max
-0.5
100
0.125
0.190
-0.95
Unit
V
µA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
6.0Ω
V
GS
= -10V
V
GS
= -4.5V
V
DS
= -30V
I
D
= -2.2A
V
DS
= -30V, V
GS
= 0V
f = 1MHz
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250μA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.2A
V
GS
= -4.5V, I
D
= -1.8A
V
DS
= -15V, I
D
= -2.2A
I
S
= -2.0A, V
GS
= 0V, T
J
= +25°C
I
S
= -1.7A, di/dt = 100A/µs,
T
J
= +25°C
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes:
9. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
4 of 8
www.diodes.com
February 2015
© Diodes Incorporated
ZXMP6A17G
Typical Characteristics
ADVANCE INFORMATION
T = 25°C
10V
5V
T = 150°C
10V
5V
4.5V
3.5V
3V
2.5V
2V
-I
D
Drain Current (A)
1
2.5V
-I
D
Drain Current (A)
10
4V
3.5V
3V
10
1
-V
GS
1.5V
0.1
2V
-V
GS
0.1
0.01
0.1
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.8
10
Output Characteristics
V
GS
= -10V
and V
GS(th)
Normalised R
DS(on)
-I
D
Drain Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
V
GS
= V
DS
I
D
= -250uA
I
D
= - 2.3A
R
DS(on)
1
T = 150°C
T = 25°C
0.1
1
2
3
-V
DS
= 10V
V
GS(th)
4
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
50
100
150
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
100
10
1
0.1
T = 25°C
2V
-V
GS
2.5V
3V
3.5V
4V
5V
10V
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
V
GS
= 0V
0.01
0.1
-I
D
Drain Current (A)
1
10
0.01
0.2
0.4
0.6
0.8
1.0
1.2
On-Resistance v Drain Current
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
5 of 8
www.diodes.com
February 2015
© Diodes Incorporated
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