A Product Line of
Diodes Incorporated
Green
ZXT951K
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -60V
R
SAT
= 53mΩ Typical
Continuous Collector Current I
C
= -6A
Up to 15A Peak Current
Low Equivalent On Resistance
Low Saturation Voltage
High Gain Holds Up (100 min @ 2A )
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin; Solderable per MIL-STD-202,
Method 208
Weight: 0.34 grams (approximate)
Application
•
•
•
•
•
DC – DC converters
Power Switches
Motor Control
Automotive Circuits
Inverter Circuits
TO252
Top View
Device Schematic
Pin Out Configuration
Top view
Ordering Information
(Note 4)
Product
ZXT951KTC
Notes:
Marking
ZXT951
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXT
951
YYWW
ZXT951 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 09 = 2009)
WW = Week Code (01 – 53)
ZXT951K
Document number: DS33642 Rev. 3 - 2
1 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT951K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Collector Current
Symbol
BV
CBO
BV
CER
V
CEO
V
EBO
I
C
I
B
I
CM
Value
-100
-100
-60
-7
-6
-0.5
-15
Unit
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
Value
2.1
3.2
4.2
59
39
30
1.77
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
5. For the device mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For the device mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For the device mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions
8. Thermal resistance from junction to solder-point (at the end of the collector lead)
ZXT951K
Document number: DS33642 Rev. 3 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT951K
Typical Thermal Characteristics
-I
C
Collector Current (A)
Limit
-I
C
Collector Current (A)
10
V
CE(sat)
10
V
CE(sat)
Limit
1
DC
1s
100ms
T
amb
=25°C
25mm x 25mm
1oz FR4
10ms
1ms
100µs
1
DC
1s
100ms
10ms
T
amb
=25°C
50mm x 50mm
2oz FR4
1ms
100µs
100m
100m
10m
100m
1
10
10m
0.1
1
10
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
T
amb
=25°C
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
60
Thermal Resistance (°C/W)
50
40
25mm x 25mm
1oz FR4
D=0.5
Thermal Resistance (°C/W)
30
25
20
T
amb
=25°C
50mm x 50mm
2oz FR4
D=0.5
30
20
10
0
100µ
D=0.1
D=0.2
15
10
5
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
Single Pulse
D=0.05
1m
10m 100m
1
10
100
1k
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Max Power Dissipation (W)
Max Power Dissipation (W)
Single Pulse
T
amb
=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
50mm x 50mm
2oz FR4
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
25mm x 25mm
1oz FR4
1
100µ
1m
10m 100m
1
10
100
1k
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
ZXT951K
Document number: DS33642 Rev. 3 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT951K
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Note 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CER
h
FE
Min
-100
-100
-60
-7
-
-
-
100
100
50
15
-
-
-
-
-
-
-
-
-
Typ.
-125
-125
-80
-8.1
<1
<1
<1
230
200
110
40
-13
-60
-115
-315
-1.05
-0.92
120
74
82
350
Max
-
-
-
-
-20
-10
-20
-
300
-
-
-25
-90
-165
-400
-1.2
-1.05
-
-
-
Unit
V
V
V
V
nA
nA
nA
-
Test Condition
I
C
= -100µA
I
C
= -100µA, R
BE
≤1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -80V
V
EB
= -6V
V
CE
= -80V, R
BE
≤1kΩ
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -6A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -6A, I
B
= -600mA
I
C
= -6A, I
B
= -600mA
I
C
= -6A, V
CE
= -1V
I
C
= -100mA, V
CE
= -10V
f = 50MHz
V
CB
= -10V, f = 1MHz,
I
C
= -2A, V
CC
= -10V,
I
B1
= I
B2
= -200mA
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
Transitional Frequency
Output capacitance
Switching times
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
OBO
t
ON
t
OFF
mV
V
V
MHz
pF
nS
9. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤2%.
ZXT951K
Document number: DS33642 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT951K
Typical Electrical Characteristics
1
Tamb=25°C
0.6
0.5
I
C
/I
B
=10
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=100
I
C
/I
B
=50
0.4
0.3
0.2
0.1
100m
100°C
25°C
I
C
/I
B
=10
10m
1m
10m
100m
I
C
/I
B
=20
-55°C
1
10
0.0
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
300
1.4
100°C
V
CE
=1V
V
CE(SAT)
v I
C
1.4
I
C
/I
B
=10
Typical Gain (h
FE
)
1.2
250
1.2
-55°C
Normalised Gain
- V
BE(SAT)
(V)
1.0
0.8
0.6
25°C
200
150
100
1.0
0.8
0.6
0.4
1m
25°C
0.4
0.2
0.0
1m
-55°C
50
10m
100m
1
10
0
100°C
10m
100m
1
10
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.4
V
CE
=1V
1.2
-55°C
- V
BE(ON)
(V)
1.0
25°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
- I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXT951K
Document number: DS33642 Rev. 3 - 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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