ZXTD4591AM832
MPPS™ Miniature Package Power Solutions
Complementary dual 40V high performance transistor
Summary
NPN Transistor - V
CEO
= 40V; R
SAT
= 195m ; I
C
= 2.5A
PNP Transistor - V
CEO
= -40V; R
SAT
= 350m ; I
C
= -2A
Description
Packaged in the 3mm x 2mm MLP (Micro Leaded
Package), these high performance NPN / PNP
combination dual transistors offer lower on state losses
making them ideal for use in DC-DC circuits and various
driving and power-management functions.
Users will also gain several other key benefits:
•
•
•
•
•
Performance capability equivalent to much
larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
C1
C2
B1
B2
Features
•
•
•
•
Low Saturation Voltage (500mV max @1A)
H
FE
specified up to 2A
I
C
= 2.5A Continuous Collector Current
3mm x 2mm MLP
E1
E2
Applications
•
•
•
•
DC - DC Converters
Power switches
Motor control
LED Backlighting circuits
C2 C2 C1 C1
5
PNP
4
3
2
6
7
8
NPN
1
Ordering information
Device
ZXTD4591AM832TA
ZXTD4591AM832TC
Reel size
(inches)
7
13
Tape width
(mm)
8
8
Quantity
per reel
3,000
10,000
E2 B2 E1 B1
Bottom view
Device marking
91A
Issue 2 - April 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXTD4591AM832
Absolute maximum ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous collector current
(a)(f)
Continuous collector current
(b)(f)
Base current
Power dissipation at T
A
=25°C
(a)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(b)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(c)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(d)(f)
Linear derating factor
Power dissipation at T
A
=25°C
(d)(g)
Linear derating factor
Power dissipation at T
A
=25°C
(e)(g)
Linear derating factor
Storage temperature range
Junction temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
stg
T
j
NPN
40
40
5
3
2
2.5
PNP
-40
-40
-5
-3
-1.5
-2.0
Unit
V
V
V
A
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
300
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
150
Thermal resistance
Parameter
Junction to ambient
(a)(f)
Junction to ambient
(b)(f)
Junction to ambient
(c)(f)
Junction to ambient
(d)(f)
Junction to ambient
(d)(g)
Junction to ambient
(e)(g)
Symbol
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
Value
83.3
51
125
111
73.5
41.7
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all
exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected
to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air
conditions
with all exposed pads attached.
The copper area is split down the centre line into two separate areas with
one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal
lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all
exposed pads attached attached.
The copper area is split down the centre line into two separate areas with one half
connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all
exposed pads attached attached.
The copper area is split down the centre line into two separate areas with one half
connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of
the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick
FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W
giving a power rating of Ptot = 500mW.
Issue 2 - April 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
Embedded System
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