ZXTDCM832
MPPS™ Miniature Package Power Solutions
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 68m ; I
C
= 4A
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline,
these new 4
th
generation low saturation dual transistors offer extremely low on
state losses making them ideal for use in DC-DC circuits and various driving
and power management functions.
Additionally users gain several other
key benefits:
Performance capability equivalent to much larger packges
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count
3mm x 2mm (Dual die) MLP
C2
C1
FEATURES
•
Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
(100mV @1A)
•
h
FE
characterised up to 6A
•
I
C
=4A Continuous Collector Current
•
3mm x 2mm MLP
B2
B1
E2
E1
APPLICATIONS
•
DC - DC Converters
•
Charging circuits
•
CCFL Backlighting
•
Power switches
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXTDCM832TA
ZXTDCM832TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
3mm x 2mm MLP
underside view
DEVICE MARKING
DCC
ISSUE 1 - JUNE 2002
1
ZXTDCM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
j
:T
stg
LIMIT
100
50
7.5
6
4
1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83.3
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 1 - JUNE 2002
2
ZXTDCM832
TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(SAT)
Limited
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (e)(g)
T
amb
=25°C
1
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
0.1
0.01
0.1
1
10
100
25
50
75
100
125
150
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
Note (a)(f)
1oz copper
Note (f)
1oz copper
Note (g)
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
2oz copper
Note (f)
2oz copper
Note (g)
0
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T
amb
=25°C
2oz copper
Note (g)
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
T
j max
=150°C
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Continuous
2oz copper
Note (f)
1oz copper
Note (f)
1oz copper
Note (g)
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZXTDCM832
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
10
70
145
115
225
270
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
200
300
200
100
100
1.00
0.94
400
450
400
225
40
165
12
170
750
20
MHz
pF
ns
ns
MIN.
100
50
7.5
TYP.
190
65
8.2
25
25
25
20
100
200
220
300
320
1.05
1.00
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=6V
V
CES
=40V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, I
B
=200mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - JUNE 2002
4
RF/Wirelessly
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