71982S15D datasheet, PDF - EEWORLD Datasheet

71982S15D: DescriptionStandard SRAM, 16KX4, 15ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, HERMETIC SEALED, DIP-28; Categorystorage storage; File Size714KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

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71982S15D Overview

Standard SRAM, 16KX4, 15ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, HERMETIC SEALED, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1167348043
package instruction	0.300 INCH, CERAMIC, HERMETIC SEALED, DIP-28
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	15 ns
I/O type	SEPARATE
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	28
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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