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2N3350

Description
Doubles transistors PNP silicium Planar epitaxiaux
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

2N3350 Overview

Doubles transistors PNP silicium Planar epitaxiaux

2N3350 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
<^£mL-ConJiuctoi ZPioducti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 378-8960
Planar epitaxiaux
Epitaxial plmir
Doubles transistors PNP silicium
Dual PNP silicon transistors
* 2N 3350
* 2 N 3351
* 2 N 3352
• Amplification diffSrentielle
Differential amplification
Transistors comptementaires
aux 2N 2642 a 2N 2644
Complementary transistors
of 2N 2642 to 2N 2644
V
CEO
'c
h
21E
(10MA)
-46 V
-30 mA
100 - 300
0,9 min.
0,8 min,
0,6 min.
Bottler F 100
Cast
2N 3350
2N 3351
2N 3352
Dissipation de puissance maximale
MmiiKUH ,
B
h
21E1
h
21E2
*tfl
B?
150
200 l
co
,,CC)(3)(4)
Valeurs limites absolues d'utilisation a t
a
mb=25°C
Absolute ntinffs (limiting vtluttt
•^^^^^^
rWVPVn*
fn*m**r
( Sauf indications contrairos )
iUnliss atarwin sftalitil}
Tension collactaur-bua
Cotlfctor>t>»lf volttgm
Tension
collecteur-emetteur
Calltctor-tmlltn volum
Tension 4metteur-base
fmitur-tiit relttgt
V
CBO
V
CEO
-60
-45
-6
-30
0,3
0,6
V
V
V
mA
W
VEBO
p
c
Courant collecteur
Collector cvrrtrtt
t
Dissipation de puissance
Powir dliitpition
t
Temperature de jonction
Junction ttmptwiun
Temperature de stockage
Storage tmmpertturm
=25«C
._ =.2S»C
1
**
ment (1)
2 4l
*
ment!
<
2
>
P
tot
T^
171
"
1
* <
3
>
2 elements (4)
max
'
0,6
1,2
*i
175
-65
W
°C
°C
min
max.
'stg
+200
\ S«mi-C niiduuon resmw ih« right In thong* (Ml conditions, pramelcr limiM wd pickag* Jlmensiofis \viihmrt nolioe
InrbrmulHin lurnrrwd by NI ScmK'umhKlim it bdMvcil In rw hiilh ucwvato ,iml rdiuhU il irM Itnw of guinf lo pros. However
s
-1
n-iiii 11 HiltM.lnn IS.MIIIKI m> fe^pniuibiliry Kir m> ein<n or niniuiiiiM Jisuivurnl in ill i'>« M Seim-t i
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