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2SB886_2014

Description
Silicon PNP Power Transistors
File Size53KB,4 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2SB886_2014 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1196
・DARLINGTON
・High
DC current gain
・High
current capacity and wide ASO
・Low
saturation voltage
APPLICATIONS
・Motor
drivers, printer
・Hammer
drivers
・Relay
drivers,
・Voltage
regulator control.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB886
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector dissipation
1.75
T
j
T
stg
Junction temperature
Storage temperature
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-110
-100
-6
-8
-12
40
W
UNIT
V
V
V
A
A

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