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55GN01CA

Description
RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size290KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

55GN01CA Overview

RF Transistor

55GN01CA Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.07 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Nominal transition frequency (fT)3000 MHz
Ordering number : ENA1111A
55GN01CA
RF Transistor
10V, 70mA, fT=5.5GHz, NPN Single CP
Features
http://onsemi.com
High cutoff frequency : fT=5.5GHz typ
High gain :
S21e
2
=9.5dB typ (f=1GHz)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
3
70
200
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-009
2.9
3
0.1
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
55GN01CA-TB-E
0.5
Packing Type: TB
Marking
2.5
1.5
LOT No.
LOT No.
0.5
1
0.95
2
ZW
0.4
TB
1 : Base
2 : Emitter
3 : Collector
CP
0.3
Electrical Connection
3
0.05
1.1
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
71112 TKIM/O2908AB MSIM TC-00001675 No. A1111-1/8
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