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BCP56

Description
1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size193KB,4 Pages
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
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BCP56 Overview

1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCP56 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage80 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor40
RoHS
BCP54-56
BCP54,55,56
TRANSISTOR (NPN)
SOT-223
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP)
1
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP54
45
45
BCP55
60
60
5
1
1.5
94
-65to+150
BCP56
100
80
Units
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BCP54
BCP55
BCP56
Collector-emitter breakdown voltage
BCP54
BCP55
BCP56
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
= 10μA,I
E
=0
V
CB
= 30 V, I
E
=0
V
CE
= 2V, I
C
=5mA
V
CE
= 2V, I
C
=150m A
V
CE
= 2V, I
C
=500m A
I
C
=500mA,I
B
=50mA
V
CE
=2V, I
C
=500m A
V
CE
=10V,I
C
=50mA,f=100MHz
100
25
63
25
0.5
1
V
V
MHz
250
V
(BR)CEO
I
C
= 10mA,I
B
=0
V
(BR)CBO
I
C
= 0.1mA,I
E
=0
Symbol
Test
conditions
MIN
45
60
100
45
60
80
5
100
V
nA
V
V
MAX
UNIT
CLASSIFICATION OF
Rank
Range
h
FE(2)
BCP54-10, BCP55-10, BCP56-10
63-160
BCP54-16, BCP55-16, BCP56-16
100-250
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com

BCP56 Related Products

BCP56 BCP54 BCP55
Description 1500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR
Number of terminals 4 4 4
Transistor polarity NPN NPN NPN
Maximum collector current 1.5 A 1 A 1 A
Maximum Collector-Emitter Voltage 80 V 45 V 45 V
state TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single
Number of components 1 1 1
transistor applications switch amplifier amplifier
Transistor component materials silicon silicon silicon
Transistor type Universal small signal universal power supply universal power supply
Minimum DC amplification factor 40 25 25
Shell connection - COLLECTOR COLLECTOR
Maximum ambient power consumption - 2 W 2 W
Rated crossover frequency - 100 MHz 100 MHz
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