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BD235

Description
2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
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BD235 Overview

2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD235 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage60 V
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor40
Rated crossover frequency3 MHz

BD235 Related Products

BD235 BD233 BD237
Description 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 POWER TRANSISTOR
state ACTIVE ACTIVE ACTIVE
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Number of terminals 3 3 -
Transistor polarity NPN NPN -
Maximum collector current 2 A 2 A -
Maximum Collector-Emitter Voltage 60 V 60 V -
packaging shape RECTANGULAR RECTANGULAR -
Package Size FLANGE MOUNT FLANGE MOUNT -
Terminal form THROUGH-HOLE THROUGH-HOLE -
terminal coating TIN LEAD TIN LEAD -
Terminal location SINGLE SINGLE -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE SINGLE -
Number of components 1 1 -
Transistor component materials SILICON SILICON -
Maximum ambient power consumption 25 W 25 W -
Minimum DC amplification factor 40 40 -
Rated crossover frequency 3 MHz 3 MHz -
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