<^£.mL-dondu<itoi LPioaucti, L/nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
NPN SILICON TRANSISTOR, EPITAXIAL PLANAR
TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL
BF415
*BF417
$f
Preferred device
Oiipotitif ntemrmmU
Compl. of BF 416 and BF 418
Video output steps in TV seta
Saga d»
sortii
dtt implifiatturs
Video dtnt let tfUviseurs
250V
BF415
BF417
CEO
h
21E
(25mA)
f
T
(25mA) i
300V
30
70 MHz
min.
typ.
Maximum power dissipation
Dissipation depuisiancemaxima/e
lot
IWI
6
4
3
0
Plastic caie
JO-126- See outline drawing CB-16 on list pages
BoJtier pltitique
vel
,
,»„,„
ratf
ca
.,
e
Ounitm o*t»
1
1
1
i
I
1
I
.i
^
v
\0
tOO
150
c
E
T (o
C
i
«» '
w
««"
Weisht : 0,7 g,
Collector connected to metal
pert of case
CollKttur tiuirl t It ptrtk mtul-
//«wdk>toft/.r
(Unless otherwise stated)
IStufindiatiomeenininil
BF41S
BF417
300
V
ABSOLUTE RATINGS (LIMITING VALUES)
VALEURS LIMITES ABSOLVES D'UTILISATION
T ._
+
25°C
amb
T
'" "
Collector-base voltage
Ttntion coHKOur-bm
CoMector-emitter voltage
Tffition colltclHtr-jmittwr
Emitter-base voltage
TtnsiOfT tmtttmr-btit
Collector current
Counnt
eoflbctM/r
Peak collector current
Couflmt df
erf 1*
dt ceUtcnur
Power dissipation
O/«;w«wto»<n/itMnc»
Storage temperature
Ttfnptntun tit stodcfgf
T
case
=
V
CBO
2SO
V
CEO
250
300
V
V
EBO
5
5
V
'c
'CM
j
2B°C
= 25°C
min.
max
p
tot
200
200
mA
300
6
1.25
300
6
1.25
mA
W
w
°c
°c
T
«g
- 55
+ 150
- 55
-H50
.VI ,Semi-t niiduLlors reserves the right to change test conditions, parameter limili ;md packuge dimensions without notice
Inl'nrmulion lumith«d by NI Svmi-C'onduclon it believed to he hdlh accurate and reliable .11 the lime of going to press. However
Scini-L onJuitiirs .bsuincs IM re'-ptmsibilily for uny emirs »r oinissiuns Jisuivured in its use \ Seini*Coiidtiili'rs envnurnues
n-itrii'crs (D
\ciif\t il:ila-:hcet.i ire
BF 415, BF 417
STATIC CHARACTERISTICS
CARACTERISTIQUES STATIQUES
T
i..25»C
(Un Ins otherwise stated)
IStu I indkttiont contnirnl
amb
Test conditions
Condition dt mtiurt
V
C B
= 200V
Win. Typ. Max.
I
E
Collector-ban cut-off current
Courtnt rttUuil
eotticiwiivtw
=o
'CBO
BF415
50
nA
V
CB
= 2BO V
I
E
=0
BF417
50
nA
Emitter-base cut-off current
Courtnt rttidutl imtntur-btm
V
E8
» 3V
l
c
=0
'EBO
50
nA
Collector-biM breikdown voltig*
Ttntlon dt cltgittgt
n«KIKir-6M
l
c
= 10 MA
IE
l
c
I
B
=o
=
10mA
=0
V
(BR)CBO
8F415
BF417
250
300
V
V
Collector-emitter breakdown voltage
Ttntfon dt cltqutgt coHtcttur-tonttttvr
V
(BR)CEO*
BF41S
BF417
250
300
V
V
Etnitter-bise breakdown voltage
Ttniioa in eltqutft tmtmur-bm
I
E
I
C
= 10/iA
=0
V
(BR)E80
5
V
v
C E
= isv
Static forward currant transfer ratio
VmHur lUtiqv* du npport dt tnntftrt
dirtet du cottffAt
l
c
= 5mA
"21 E
V
C E
= 15V
\Q
=* 25mA
l
c
Ig
= 5mA
= 1 mA
25
30
Collector-emitter saturation voltage
r«»A»n * Hivntfon
ealHtwur-tiMtmir
v
CEsat
0,2
0,5
V
v
CE
=
IQ
Base-emitter voltage
Tvaion bftf^mnmir
=• 5 mA
V
BE
15V
0,65
0,9
V
V
C
E= 15V
l
c
= 25mA
l
c
Ig
= 15V
— 25 mA
0,72
1
V
Collector-emitter saturation voltage
Tuition dt utuimtion tallnmif-tmtmur
Pulsed
t = 300
m
5 <2%
V
CEsat
0,4
1
V
BF 416. BF 417
DYNAMIC CHARACTERISTICS
CARACTEfttSTIOUES OYNAUIQUES
. 25°C
Test conditions
Condltiwn dt mtiurt
IStuf MxitiOm centrum)
Min. Typ. Max.
(Unless otherwist stated)
Output capacitance
V
I
E
f
B
30 V
=0
- 1 MHz
C22b
4,5
F
Transition frequency
Frtqvtnct dt
nwu/r/on
V
CE
= 25 mA
l
c
- 1 MHz
f
= 20 MHz
l
c
f
= 25 mA
= 1 MHz
'T
70
MHz
High frequency knee voltage
Ttntion dt eoudt tit tttutt Irtqutnct
V
CEK(HF)
-20
V
Notel
NOTE 1 : The high frequency knee voltage of a transistor is that value of the collector emitter voltage at which the
small signal forward currant transfer ratio h2!« has dropped to 80% of the value at VCE - 50 V.
Li tmitn
c*
COadf t htult frtqutnc* fun tnmktor tit, ptr dtllnltlon. It rtltur d* It Italian coltteuur tmttuvr pour
ItqutUl It itpffrt dt trtmltn dirta du courtnt t pttit ilgntl h
!t
, ta tambt t B0% dt a nltur t SO V.
h
21e
(X)
100
80
"CEK
60
V
CE
(V)
THERMAL CHARACTERISTICS
CARACTERISTIQUES THEffMIQUES
Junction-case thermel resistance
/Mtf««»
rhvmtut Uonctiv*,,,*,,
R
th(j^)
20,83
°C/W
Junction-ambient thermel resistance
Rttfinnct thtmlQut lianetlon^mbltaal
R
th(j-a)
too
"C/W
京公网安备 11010802033920号
EEWORLD
