, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BLX98
U.H.F. LINEAR POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of television
transposers and transmitters in band IV-V.
Features:
• diffused emitter ballasting resistors for an optimum temperature profile;
• gold metallization ensures excellent reliability.
The transistor has a %" capstan envelope with a moulded cap. All leads are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
mode of operation
^vision
MHz
860
860
VCE
V
26
25
•c
mA
850
850
Th
°C
70
70
dim*
dB
-60
-60
p
*
r
o sync
W
> 3,5
typ. 4,0
G
P
dB
> 5,0
typ. 5,5
class-A
class-A
* Three-tone test method (vision carrier —8 dB, sound carrier —7 dB, sideband signal —16 dB), zero dB
corresponds to peak sync level.
MECHANICAL DATA
Fig. 1 SOT-48/2.
*
(4x)
1,52
Dimensions in mm
9,7 5 max
25 min
Torque on nut: min. 0,75
(7,5
max. 0,85
(8,5
Nm
kg cm)
Nm
kg cm)
Diameter of clearance hole in heatsink: max. 4,2 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or
countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BLX98
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VQE = 0
open base
Emitter-base voltage (open collector)
Collector current
d.c.
I
C
(peak value); f > 1 MHz
ICM
Total power dissipation at T
n
= 70 °C
P
to
t
Storage temperature
'stg
Junction temperature
7Z67289.2
max.
max.
max.
50 V
27 V
3,5 V
A
A
W
°C
°C
max,
2
max.
4
max.
21,5
-65 to-1-200
max.
200
40
p
tot
7Z88300
(W)
30
20
10
50
T
h
(1) Second breakdown limit (independent
of temperature.
Fig. 2 D.C. SOAR.
Fig. 3 Power derating curve vs. temperature.
THERMAL RESISTANCE (dissipation = 21,25 W; T
mb
= 82,75 oc, i.e. T
h
=
From junction to mounting base
From mounting base to heatsink
Rthj-mb
R
tnm
b-
n
5,45 K/W
°,6 K/W
. BLX98
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0 ; l
C
= 1 0 m A
open base; IQ « 25 mA
Emitter-base breakdown voltage
open collector; Ig = 5 mA
D.C. current gain*
1C = 860 mA; VCE = 25 V
Collector-emitter saturation voltage*
IC= 500mA; I
B
= 100mA
Transition frequency at f = 500 MHz**
-I
E
= 850 mA; VrjB = 25 V
Collector capacitance at f = 1 MHz
Feedback capacitance at f » 1 MHz
i
c
= 50mA; V
CE
= 25 V
3
Collector-stud capacitance
10
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
>
>
>
>
50 V
27 V
3,5 V
15
40
0,25 V
2,5 GHz
24 pF
30 pF
15 pF
2 pF
hFE
v
CEsat
typ.
typ.
typ.
typ.
<
typ.
C
cs
7Z88130
typ.
<c
(A)
T
1
-
7C)°
Q
n
1
y
<^
^ •*=
r*-* ' •2
5°
r^
1
<*
/
f
'/
/
1
1
F-V
/
f
10-'
^
LJL_
/
^
/ /
/ /
//
/
10~
2
0,5
1
1,6 „
'BE
(v
, 2
Fig. 5 Typical values; VCE
=
25 V.
* Measured under pulse conditions: t
p
< 300 MS; S < 0,02.
** Measured under pulse conditions: t
p
< 50 MS; 6 < 0,01.
BLX98
7Z8830I
R
thj-h
(K/W)
25
p
tot(w)
35
Fig. 4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with
heatsink and junction temperature as parameters. (Rf
n m
b.h - 0,6 K/W.)
Example
Nominal class-A operation (without r.f. signal): VCE
=
25 V;
\Q
= 850 mA; T
n
= 70 °C.
Rthj-h
max
- 6,05 K/W
Tj
max. 200 °C
Typical device: R
t
f, j.
n
typ. 5,35 K/W
Tj
typ. 183°C
Fig. 4 shows:
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