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BMS3004

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size265KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BMS3004 Overview

POWER, FET

BMS3004 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompli
Is SamacsysN
Base Number Matches1
Ordering number : ENA1908B
BMS3004
P-Channel Power MOSFET
–75V, –68A, 8.5m
Ω
, TO-220F-3SG
Features
http://onsemi.com
ON-resistance RDS(on)1=6.5m
Ω
(typ.)
Input capacitance Ciss=13400pF (typ.)
4V drive
TO-220F-3SG
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--75
±20
-
-68
--272
2.0
40
150
--55 to +150
380
--54
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=--48V, L=100
μ
H, IAV=-
-54A (Fig.1)
*2
L
100
μ
H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=--68A, VGS=0V
See Fig.3
IS=--68A, VGS=0V, di/dt=--100A/μs
VDS=--48V, VGS=--10V, ID=--68A
See Fig.2
VDS=--20V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=--34A
VDS=-
-10V
ID=--34A, VGS=-
-4V
ID=--34A, VGS=-
--1.2
120
6.5
8.3
13400
1000
740
70
245
1400
650
300
30
70
--0.9
146
470
-
-1.5
8.5
11.4
Ratings
min
--75
--10
±10
--2.6
typ
max
Unit
V
μA
μA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N0613 TKIM/41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5
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