zSztnL-donauekoi iPioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUV18
BUV19
NPN HIGH CURENT
SWITCHING TRANSISTORS
Designed for high energy applications
25 15(0.99)
2667(1 05)
1067(042)
11 18(044)
6,35 (0.25)
9,15(036)
requiring robust fast switching devices
FEATURES
•
•
•
•
•
Fast Switching
LowVCE(SAT)
High Switching Currents
High Reliability
Military Options Available
3
(cas.)
792(0312)
1270(0.50)
APPLICATIONS
TO-3 (TO-204AE)
Pin 1 - Gate
Pin 2 - Drain
Case - Source
• High Efficiency Converters
• Motor Drive Control
• Switching Regulator
ABSOLUTE MAXIMUM RATINGS
(Tease
=
25°C unless otherwise stated)
Collector-Emitter Voltage (I
E
=0)
V
CBO
VCEO
VEBO
Collector-Emitter voltage (|B=O)
Emitter- Base Voltage (l
c
=0)
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Total Dissipation @ T
case
= 25°C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction - Case
BUV18
120V
60V
7V
50A
90A
16A
40A
BUV19
160V
80V
7V
50A
70A
12A
30A
«c
'C(PK)
IB
'B(PK)
PTOT
T
stg
T
J
R
9JC
250W
-65 to 200°C
200°C
Max 0.7°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUV18
BUV19
ELECTRICAL CHARACTERISTICS(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
I
B
= 0
I
C
= 0.2A
L = 25mH
I
B
= 0
L - 25mH
I
C
= 40A
l
c
= 80A
v
CE(sat>*
Min.
BUV18
BUV19
BUV18
BUV19
BUV18
BUV19
7
60
Typ.
Max.
Unit
v
CEO(sus)*
Collector - Emitter Sustaining Voltage
I
C
= 0.2A
I
B
= 4A
I
B
= 8A
I
B
= 3A
IB = 6A
I
B
= 8A
D
I
B
= 6A
IE = 50mA
V
80
0.6
1.5
0.6
1.2
2.2
2.0
1.0
V
V
V
Collector - Emitter Saturation Voltage
I
C
= 30A
l
c
= 60A
I
\j
=80A
l
c
= 60A
l
c
= OA
v
BE(sat>*
Base - Emitter Saturation Voltage
Emitter - Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO
I
OCA
CEX
I
EBO
f
T
t
on
t
r
t
s
t
on
t
r
t
s
V
RF
= -1 5V Vpp =Vr-FY
T
case
~
100
°C
3.0
1.0
8
mA
Emitter Cut-Off Current
SWITCHING CHARACTERISTICS
Transition Frequency
Turn-On Time
Fall Time
Storage Time
Turn-On Time
Fall Time
Storage Time
I
C
= OA
f= 10MHz
V
CC
= 60V
l
c
= 80A
m
D/L
V
cc
= 80V
V
EB
= 5V
V
C E
=15V I
C
=2A
BUV18
MHz
1.2
0.18
0.6
1.5
0.25
1.1
1.3
0.25
1.1
[IS
BUV19
0.9
0.17
0.6
l
c
= 60A
|
B1
= -|
B2
= 6A
NOTES
* Pulse Test: t
p
= SOO^s, 5 < 2%
51mcu
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