,
Line.
SILICON PLANAR ZENER DIODES
BZX85C 2V7 to 51V
DO-41
1.3W
These Zeners Are Best Suited For Industrial Purpose, Military & Space Applications. When Hermetically
Sealed in Glass With Double Stud. This Passivated Chip Provides Excellent Stability & Reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
VALUE
Power Dissipation (1)
PTA
1.3
Surge Power Dissipation pulse Width =10ms
PS
10
Operating And Storage Junction
Tj.Tstg
-55to+175
Temperature Range
TL
Maximum Lead Temperature for Soldering
230
During 10 sec @ 4mm From Case
Rth(j-a)
Thermal Resistance Junction to Ambient (1)
115.4
Forward Voltage @ IF=200mA
VF
1.0
11) On infinite heatsink with 4mm Lead Length
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified)
Device
V2T
IZT
IZK
Temp. Coeff
rZT
rZK
VR
IR
@
@IZK
@IZT*
@IZT*
of Zener
Ta=
Voltage typ
25 deg C
ISOdegC
min max
max
max
max
max
(V)
(V)
(ohm) (mA) (ohm)
(mA)
(%/deg C)
(uA)
(uA)
(
V
)
-0.07
BZX85C 2V7
2.50
1.0
2.90
20
80
400
150
300
1.0
-0.07
BZX85C 3VO
2.80
80
1.0
100
3.20
20
400
300
1.0
80
BZX85C 3V3
3.10
400
-0.06
40
1.0
3.50
20
1.0
200
1.0
BZX85C 3V6
3.40
70
20
3.80
20
-0.06
50
500
1.0
BZX85C 3V9
3.70
4.10
15
1.0
-0.05
10
60
500
20
1.0
BZX85C 4V3
4.00
50
1.0
-0.03
4.60
13
500
3.0
10
1.0
BZX85C 4V7
4.40
5.00
13
3.0
45
1.0
-0.01
500
10
1.0
BZX85C 5V1
4.80
45
500
1.0
+0.01
5.40
10
1.0
10
1.5
7
1.0
BZX85C SV6
5.20
6.00
45
400
1.0
+0.03
10
2.0
+0.04
BZX85C 6V2
5.80
4
35
300
1.0
6.60
1.0
10
3.0
1.0
BZX85C 6V8
6.40
7.20
3.5
35
1.0
300
+0.05
10
4.0
3
35
0.5
BZX85C 7V5
7.00
7.90
200
+0.05
1.0
10
4.5
25
0.5
BZX85C 8V2
7.70
8.70
5
200
+0.06
1.0
10
6.2
BZX85C 9V1
8.50
25
200
0.5
1.0
9.60
5
+0.06
10
6.8
+0.07
9.40 10.60
25
200
0.5
BZX85C10
7.5
0.5
10
7.0
+0.07
20
300
0.5
BZX85C11
10.40 11.60
8
0.5
8.2
10
20
BZX85C 12
11.40 12.70
9
0.5
+0.07
0.5
10
350
9.1
+0.07
BZX85C13
20
400
0.5
0,5
10
12.40 14.10
10
10
15
0.5
0.5
11
500
+0.08
10
BZX85C 15
13.80 15.60
15
15
500
+0.08
BZX85C 16
15.30 17.10
15
0.5
0.5
10
12
0.5
16.80 19.10
20
15
500
0.5
+0.08
10
13
BZX85C18
10
600
0.5
+0.08
0.5
BZX85C 20
18.80 21.20
24
10
15
0.5
10
600
+0.08
0.5
BZX85C 22
20.80 23,30
25
10
16
10
600
0.5
+0.08
BZX85C 24
22.80 25.60
25
0.5
10
18
UNIT
w
w
degC
degC
deg C/mW
V
IZM
IZSM##
(mA)
370
340
320
290
280
250
215
200
190
170
155
140
130
120
105
97
88
79
71
66
62
56
52
47
(mA)
2874
2604
2381
2193
2033
1812
1667
1543
1389
1263
1157
1055
958
868
786
718
656
591
534
487
436
393
358
326
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Ta=2S deg C Unless otherwise Specified!
rZK
VZT
rZT
IZT
IZK
Temp. Coeff
IR
Device
@
@IZK
@IZT*
@IZT*
of
Ta=
Zener Voltage
25 deg C
tSOdegC
min
max
max
max
max
max
typ
(V)
(ohm) <mA)
(ohm)
(%/deg C)
(V)
(mA)
(uA)
(uA)
BZX85C 27
8.0
750
0.25
+0.09
25.10
28.90 30
0.5
10
0.5
1000
0.25
+0.09
28.00 32.00 30
8.0
BZX85C 30
10
1000
0.25
31.00
35.00 35
8.0
+0.09
0.5
10
BZX85C 33
8.0
0.5
BZX85C 36
34.00 38.00 40
1000
0.25
+0.09
10
37.00
41.00
50
1000
0.25
+0.09
0.5
10
6.0
BZX85C 39
1000
0.25
0.5
40.00 46.00 50
6.0
+0.09
10
BZX85C 43
1500 0.25
4.0
0.5
44.00 50.00 90
+0.09
10
BZX85C 47
+0.09
0.5
BZX85C 51
4.0
1500
0.25
48.00 54.00 115
10
"Pulse Condition : 20ms <=tp<=50ms, Duty Cycle =2%
## Rectangular wave form (tp=10ms)
VR
IZM
IZSM##
<
V
)
20
22
24
27
30
33
36
39
(mA)
41
36
33
30
28
26
23
21
(mA)
288
260
238
219
203
181
167
154
DO-41 Glass Axial Package
«
A
•>
B
•4
A
>•
DIM
A
MIN
27.90
MAX
!
|
i
!
o
T
t
1
Q
B
4.06
0.71
2.03
5.51
0.87
2.72
t
|
NOTES
1 . Cathode is marked by Band.
2. All dimensions are in mm.
C
D
RF/Wirelessly
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