JbEmi-C-onauctoi ^Product!, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifier
Reverse Blocking Trlode Thyristor
C230(
)3
MAXIMUM RATINGS
Rating
Peak Repetitive Off-State Voltage (1)
(T
C
- -40 to + 100"C)
Suffix Symbol
F
A
B
C
D
E
M
F
A
B
C
0
E
M
Value
50
. 100
200
300
400
500
600
75
150
300
400
500
600
720
25
250
260
5
0.5
2
-40 to +100
-40 to +125
30
Unit
Volta
VDRM
and
VRRM
SCRs
25 AMPERES RMS
50 thru 600 VOLTS
Non-Repetitive Reverse Voltage
(T
c
- -40 to 100X1
VRSM
Volta
Forward Current RMS
Peak Surge Current
(One Cycle. 60 Hi, T
C
- -40 to 100T)
Circuit Fusing
(T
c
= -40 to 100"C, t - 1 to 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Isolated Stud
'T(RMS)
Amps
Amps
A2*
ITSM
ft
PGM
PGIAVI
<GM
Tj
T
stg
Watts
Watt
Amp*
STYLE
I
PIN I
I.
1.
STUD.
MAIN TEHMINAI.1
GATE
MAIN TERMINAL 2
ISOLATED
•c
•c -,
in. Ib.
Unit
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
0551
0501
MAX
0555
0505
10)0
0160
1255
0174
—
1420
A
1400
1
127)
T31J
-
2CIS
t
t
its
401
-
~I4I
t
441
.*.
3 7 S
1067
-
006S
-
0141
Symbol
Max
T7I
4
*
,4i
1
TilT
TuJ-
7 7!i
!
4
0420
0315
0455
0<I5
TTJos
0255
"we
1.15
•c/w
Jm
ow
0150
O.OIS
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
<T
C
- 25X unless otherwise noted.)
Characteristic
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM, 9»*
8
open) TC = 25°C
T
C
- 100°C
Forward "On" Voltage
dTM - 100 A Peak, Pulse Width « 1 ms. Duty Cycle « 2%)
Gate Trigger Current,
(VD - 12 Vde, RL - 120 Ohms)
(VD - 12 Vdc, RL - 60 Ohms)
Gate Trigger Voltage
(V
D
- 12 Vdc, RL - 120 Ohms)
(VD = 12 Vdc, RL = 60 Ohms)
<V
D
- Rated VDRM. RL - 1000 Ohms)
Holding Current
(V
D
- 24 V, gate open, IT - 0.5 A)
Turn-On Time ltd + t
r
)
dTM = 25 Adc, IQT - 40 mAdc, V
D
» Rated VDRM)
Turn-Off Time
dTM = 10 A, IR - 10 A, Pulse Width - 50 M*.
dv/dt * 20 V/<i*. VQ - Rated VDRM)
Forward Voltage Application Rate
(V
D
- Rated V
DRM
)
Symbol
Mhl
_
Typ
—
—
Max
10
1
1.9
Unit
MA
mA
IDRM. IRRM
VTM
IGT
TC - -40"C
—
Volts
mA
—
—
25
40
VGT
TC - -40°C
TC - +100°C
T
c
- -40"C
—
0.2
Volt*
1.5
2
50
100
—
IH
'gt
«q
—
—
—
1
mA
M»
M»
—
—
TC - 100°C
dv/dt
T
C
- 100»C
25
35
100
_
—
V/MS
Wireless Connectivity
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