CBRHDSH1-90 datasheet, PDF - EEWORLD Datasheet

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CBRHDSH1-90: Description1 A, 90 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size873KB，4 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CBRHDSH1-90 Overview

1 A, 90 V, SILICON, BRIDGE RECTIFIER DIODE

CBRHDSH1-90 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	DIP
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	20 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	1.2 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	MATTE TIN (315)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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CBRHDSH1-100

SURFACE MOUNT

HIGH DENSITY

1 AMP SILICON

SCHOTTKY BRIDGE RECTIFIER

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHDSH1-100

is a full wave bridge rectifier in a durable epoxy surface

mount molded case, designed for low voltage full wave

rectification applications. The molding compound used

in this device has UL flammability classification 94V-O.

MARKING CODE: CSH110

FEATURES:

•

Low Leakage Current (40nA TYP @ VRRM)

•

Low Forward Voltage Drop Schottky Diodes

•

High 1.0A Current Rating

HD DIP CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Reverse Voltage

VRRM

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current

Peak Forward Surge Current

Power Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Resistance

VR

VR(RMS)

IO

IFSM

PD

TJ

Tstg

Θ

JA

100

71

1.0

20

1.2

-50 to +125

-55 to +150

85

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IR

VR=100V

0.04

10

IR

BVR

VF

CJ

VR=100V, TA=50°C

VR=100V, TA=100°C

IR=150μA

IF=500mA

IF=1.0A

VR=4.0V, f=1.0MHz

100

615

690

230

700

750

1.0

20

UNITS

μA

mA

V

mV

pF

R6 (22-May 2012)

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