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CEP08N6A

Description
N-Channel Enhancement Mode Field Effect Transistor
File Size386KB,5 Pages
ManufacturerCET
Websitehttp://www.cetsemi.com
Download Datasheet View All

CEP08N6A Overview

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP08N6A
CEB08N6A
CEF08N6A
V
DSS
600V
600V
600V
R
DS(ON)
1.25Ω
1.25Ω
1.25Ω
I
D
7.5A
7.5A
7.5A
d
CEP08N6A/CEB08N6A
CEF08N6A
PRELIMINARY
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
TO-220F
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
e
Units
V
V
600
±
30
7.5
5.2
30
150
1
245
7
-55 to 175
7.5
5.2
30
48
0.3
d
d
A
A
A
W
W/ C
mJ
A
C
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
h
Single Pulsed Avalanche Current
h
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
1
62.5
Limit
3.1
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Feb
http://www.cetsemi.com
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