DMP3008SFG
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
ADVANCE INFORMATION
V
(BR)DSS
R
DS(ON)
max
17mΩ @ V
GS
= -10V
-30V
25mΩ @ V
GS
= -4.5V
-7.1A
I
D
max
T
A
= 25°C
-8.6A
Features and Benefits
•
•
•
•
•
•
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
POWERDI3333-8
S
S
Pin 1
S
G
Gate
D
D
D
D
Source
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP3008SFG-7
DMP3008SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
S31
S31 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
1 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
Maximum Ratings
@T
A
= 25°C unless otherwise specified
ADVANCE INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
-30
±20
-8.6
-7.0
-11.7
-9.3
-7.1
-5.6
-9.6
-7.6
-80
-3.0
Units
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 6) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
Steady state
t<10s
Steady state
t<10s
R
θ
JA
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
0.9
140
72
2.2
57
30
7.1
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
100
R
DS(on)
Limited
P
W
= 10µs
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
90
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
Single Pulse
R
θ
JA
= 57
°
C/W
R
θ
JA(t)
= r
(t)
* R
θ
JA
T
J
- T
A
= P * R
θ
JA(t)
-I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
P
W
= 100µs
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 57°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
⎯
⎯
-1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
-1.6
12.5
18.5
13
-0.7
2230
328
294
6.4
47
23
9.4
5.6
10.5
8.5
90
40
Max
⎯
-1.0
±100
-2.1
17
25
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -15V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -10A
nA
V
mΩ
S
V
pF
Ω
nC
ns
V
GS
= -10V, V
DS
= -15V, R
G
= 6Ω
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
30
30
25
25
-I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
DS
= -5.0V
ADVANCE INFORMATION
-I
D
, DRAIN CURRENT (A)
20
V
GS
= 4.5V
V
GS
= 4.0V
20
15
V
GS
= 3.5V
V
GS
= 3.0V
15
10
10
T
A
= 150
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
5
V
GS
= 2.5V
5
0
2.0
1
T
A
= 125
°
C
0
0
0.5
1.0
1.5
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
2
3
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.05
0.04
V
GS
= -4.5V
0.04
0.03
T
A
= 150
°
C
T
A
= 125
°
C
0.03
0.02
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
0.02
0.01
0.01
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
30
1.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.05
0.04
1.3
0.03
V
GS
= -4.5V
I
D
= -5A
1.1
0.02
0.9
0.7
0.5
-50
0.01
V
GS
= -10V
I
D
= -10A
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 8 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 9 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
4 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
2.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
20
18
-I
S
, SOURCE CURRENT (A)
ADVANCE INFORMATION
2.0
16
14
12
10
8
6
4
2
1.5
1.0
0.5
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
0
-50
0
0.4
0.6
0.8
1.0
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
T
A
= 150°C
C
T
, JUNCTION CAPACITANCE (pF)
-I
DSS
, LEAKAGE CURRENT (nA)
1,000
T
A
= 125°C
C
iss
1,000
100
T
A
= 85°C
C
oss
C
rss
10
T
A
= 25°C
100
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
30
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
1
0
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
4
2
0
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
60
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
5 of 7
www.diodes.com
May 2012
© Diodes Incorporated
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