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GBPC1510

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size224KB,4 Pages
ManufacturerETC2
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GBPC1510 Overview

BRIDGE RECTIFIER DIODE

GBPC1510 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typebridge rectifier diode
GBPC1502 thru GBPC1510
Glass Passivated Single
Phase Bridge Rectifiers
Reverse Voltage
200 to 1000V
Forward Current
15 Amp
Features
Glass passivated die construction
Integrally molded heatsink provides
Very low thermal resistance for
Maximum heat dissipation
The plastic material used carries UL
flammability recognition 94V-0
High surge current capability
High temperature soldering guaranteed:
260
/10 seconds, 0.375” (9.5mm) lead
length, 5lbs. (2.3kg) tension
Circuit
-
Module Type
TYPE
GBPC1502
GBPC1504
GBPC1506
GBPC1508
GBPC1510
Maximum Ratings and Thermal Characteristics
(TA = 25℃ unless otherwise noted)
Symbol
I
F(AV)
I
FSM
i
2
t
Visol
Maximum average forward output rectified current
Peak forward surge current single half sine-wave superimposed
on rated load (JEDEC Method)
Rating for fusing (t<8.3ms)
a.c.50HZ;r.m.s.;1min
Maximum thermal resistance
(1)
Operating Junction and storage temperature range
Approximate Weight
R
θJC
T
j
, T
STG
Weight
Electrical Characteristics
(TA = 25℃ unless otherwise noted)
Symbol
V
F
I
R
Notes:
Maximum Instantaneous Forward Voltage per leg
Maximum DC reverse current at rated
DC blocking voltage per leg
(1) Unit case mounted on Al plate heatsink
(2) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with M5 screw
www.smsemi.com
1
Document Number: GBPC1502 thru GBPC1510
Aug.22,2014
~
+
V
RRM
200V
400V
600V
800V
1000V
Mechanical Data
Case:
Molded plastic case
Terminals:
Plated leads solderable per
MIL-STD-750, Method 2026
Polarity:
Marked on Body
Mounting Position:
Any
~
V
RSM
300V
500V
700V
900V
1100V
Conditions
Tc =55℃
Values
15
300
374
2500
Units
A
A
A
2
s
V
1.9
-55 to +150
15
℃/W
g
Conditions
I
FM
=7.5A
T
A
= 25℃
T
A
= 125℃
Values
1.1
5.0
500
Units
V
µA

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