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LCE51A

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size295KB,5 Pages
ManufacturerETC2
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LCE51A Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

LCE6.5 thru LCE170A
Transient Voltage Suppressor
Breakdown Voltage 6.5 to 170 Volts
Peak Pulse Power
1500 Watts
Features
CASE: DO-204AL (DO-27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
PPM
I
PPM
Conditions
Peak pulse power capability with a 10/1000μs
Peak pulse current with a 10/1000μs
Application
Breakdown Voltages (V
BR
)from 6.5 to 170V
1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Low capacitance
Fast Response Time
Excellent clamping capability
High temperature soldering guaranteed: 265
/10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on IC
S
, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number and cathode band
Polarity:
Cathode indicated by band
Weight:
1.2g(Approximately)
25 C unless otherwise specified
O
Value
1500
SEE TABLE1
5
1.52
3.5
22
82
-65 to +150
Unit
W
A
W
W
V
℃/W
℃/W
Steady state power dissipation at T
L
=40℃ ,Lead lengths 0.375”(10mm)
P
M(AV)
V
F
R
θJL
R
θJA
T
J,
T
STG
Steady state power dissipation at T
A
=25℃ when mounted on FR4 PC
described for thermal resistance
Maximum instantaneous forward voltage at 100A
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: LCE6.5 thru LCE170A
Feb.29, 2012
www.smsemi.com
1

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