BC309B datasheet, PDF - EEWORLD Datasheet

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BC309B: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC309B Overview

Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

BC309B Parametric

Parameter Name	Attribute value
Objectid	1404818068
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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BC309B Related Products

	BC309B	BC239B	BC308B	BC257A	BC320A	BC258C	BC259C	BC318
Description	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.15A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Reach Compliance Code	unknown	compliant	not_compliant	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.5 A	0.15 A	0.5 A	0.05 A	0.5 A
Configuration	SINGLE	Single	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200	200	120	110	380	380	110
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	NPN	PNP	PNP	PNP	PNP	PNP	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.5 W	0.625 W	0.5 W	0.6 W	0.6 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	130 MHz	150 MHz	130 MHz	130 MHz	100 MHz	130 MHz	130 MHz	100 MHz
Objectid	1404818068	-	-	1404818049	1404818081	1404818054	1404818057	1404818077
ECCN code	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	EAR99
Collector-based maximum capacity	6 pF	-	6 pF	6 pF	4 pF	6 pF	6 pF	4 pF
Collector-emitter maximum voltage	20 V	-	25 V	45 V	45 V	25 V	20 V	30 V
JEDEC-95 code	TO-92	-	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	-	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	-	1	1	1	1	1	1
Number of terminals	3	-	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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