SIQ125-102 datasheet, PDF - EEWORLD Datasheet

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SIQ125-102: DescriptionSMT Power Inductor; File Size40KB，1 Pages; ManufacturerETC

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SIQ125-102 Overview

SMT Power Inductor

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SMT Power Inductor

SIQ125 Type

Features

Low profile (6.0mm max. Height), high current (8A,1.3uH) SMD type.

Magnetically shielded, suitable for high density mounting.

High energy storage and low DCR.

Provided with embossed carrier tape packing.

Ideal for power source circuits, DC-DC converter,

DC-AC inverters inductor application.

In addition to the standard versions shown here,

custom inductors are available to meet your exact requirements.

Mechanical Dimension:

Unit: mm

Recommended Pad

6.0 Max.

12.2 0.3

5.4

2.9

5.0 0.2

12.2 0.3

7.0

2.0 0.2

7.6 0.3

Electrical Characteristics:

PART NO.

SIQ125-1R3

SIQ125-2R1

SIQ125-3R1

SIQ125-4R4

SIQ125-5R8

SIQ125-7R5

SIQ125-100

SIQ125-120

SIQ125-150

SIQ125-180

SIQ125-220

SIQ125-270

SIQ125-330

SIQ125-390

SIQ125-470

SIQ125-560

SIQ125-680

SIQ125-820

SIQ125-101

SIQ125-121

SIQ125-151

SIQ125-181

SIQ125-221

SIQ125-271

SIQ125-331

SIQ125-391

SIQ125-471

SIQ125-561

SIQ125-681

SIQ125-821

SIQ125-102

(UH)

1.3

2.1

3.1

4.4

5.8

7.5

100

120

150

180

220

270

330

390

470

560

680

820

1000

DCR

( ) MAX

0.012

0.014

0.017

0.020

0.021

0.024

0.025

0.027

0.030

0.034

0.040

0.051

0.057

0.068

0.075

0.11

0.12

0.14

0.16

0.17

0.23

0.29

0.40

0.46

0.51

0.69

0.77

0.86

1.20

1.34

1.53

RATED

(Adc)

8.0

7.0

6.0

5.0

4.4

4.2

4.0

3.5

3.3

3.0

2.8

2.3

2.1

2.0

1.8

1.7

1.5

1.4

1.3

1.1

1.0

0.90

0.80

0.75

0.68

0.65

0.58

0.54

0.48

0.43

0.40

1000.00

100.00

INDUCTANCE (uH)

10.00

102

821

681

561

471

391

331

271

221

181

151

121

101

820

680

560

470

390

330

270

220

180

150

120

100

7R5

5R8

4R4

3R1

2R1

1R3

1.00

0.00

0.01

0.10

1.00

10.00

100.00

CURRENT (A)

Tolerance of inductance

1.3~7.5uH +30/-20% 10~1000uH 20%

RATED

: rated current. L<20%, T<45

C at I

RATED

Operating temperature: -20

C to 105

C (including self-temperature rise)

Test condition at 25

C: 1.3~7.5uH 100KHz,0.1V 10~1000uH 1KHz,1V

DELTA ELECTRONICS, INC.

(TAOYUAN PLANT CPBG)

252, SAN YING ROAD, KUEISAN INDUSTRIAL ZONE, TAOYUAN SHIEN, 333, TAIWAN, R.O.C.

TEL: 886-3-3591968; FAX: 886-3-3591991

http://www.deltaww.com

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