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MSD200-18

Description
3 PHASE, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size166KB,4 Pages
ManufacturerETC2
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MSD200-18 Overview

3 PHASE, 1800 V, SILICON, BRIDGE RECTIFIER DIODE

MSD200
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
200 Amp
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
+
MSD
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL E243882 approved
~
~
~
-
Module Type
TYPE
MSD200-08
MSD200-12
MSD200-16
MSD200-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Conditions
Three phase, full wave
Tc=100℃
t=10mS Tvj =45℃
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
200
2240
25000
3000
-40 to +150
-40 to +125
5±15%
5±15%
230
Units
A
A
A
2
s
V
Nm
Nm
g
To terminals(M6)
To heatsink(M6)
Module (Approximately)
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Per diode
Conditions
Values
0.45
0.025
Units
℃/W
℃/W
Module (Approximately)
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=300A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
1
Conditions
Values
Min.
Typ.
1.50
Max.
1.65
0.5
6
Units
V
mA
mA
Document Number: MSD200
Aug.31, 2010
www.
smsemi.com

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Description 3 PHASE, 1800 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
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