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http://www.ncepower.com
NCE4503S
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4503S uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge .
The SOP-8 package
is universally preferred for all commercial industrial
surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-channel
P-channel
General Features
●
N-Channel
V
DS
= 30V,I
D
=10A
R
DS(ON)
< 20mΩ @ V
GS
=4.5V
R
DS(ON)
< 13.5mΩ @ V
GS
=10V
●
P-Channel
V
DS
= -30V,I
D
= -9.1A
R
DS(ON)
< 35mΩ @ V
GS
=-4.5V
R
DS(ON)
< 20mΩ @ V
GS
=-10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
Marking and pin assignment
Application
●
Battery protection
●
Load switch
●
Power management
SOP-8
top view
Package Marking and Ordering Information
Device Marking
4503
Device
NCE4503S
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Maximum Power Dissipation
T
A
=25℃
T
A
=25℃
T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
N-Channel
30
±20
10
7.9
30
2.5
-55 To 150
P-Channel
-30
±20
-9.1
-7.2
-30
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Operating Junction and Storage Temperature Range
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note2)
R
θJA
N-Ch
P-Ch
NCE4503S
50
50
℃
/W
N-CH Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=6A
-
0.8
1.2
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V,I
D
=10A,
V
GS
=4.5V
V
DD
=25V,I
D
=1A
V
GS
=10V,R
GEN
=6Ω
-
-
-
-
-
-
-
30
20
100
80
13
5.5
3.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
-
-
-
1550
300
180
-
-
-
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
DS
=5V,I
D
=10A
1
-
-
15
1.6
7.5
11
-
3
13.5
20
-
V
mΩ
mΩ
S
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
30
-
-
33
-
-
-
1
±100
V
μA
nA
Symbol
Condition
Min
Typ
Max
Unit
Wuxi NCE Power Semiconductor Co., Ltd
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P-CH Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=-6A
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-9.1A
V
GS
=-10V
V
DD
=-15V, ID=-1A,
V
GS
=-10V,R
GEN
=6Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-9.1A
V
GS
=-4.5V, I
D
=-5A
V
DS
=-15V,I
D
=-9.1A
-1
-
-
10
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-30V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-30
-
-
NCE4503S
Condition
Min
Typ
-33
-
-
-1.5
15
21
-
1600
350
300
10
15
110
70
30
5.5
8
-
Symbol
Max
-
-1
±100
-3
20
35
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Pb Free Product
http://www.ncepower.com
N- Channel Typical Electrical and Thermal Characteristics (Curves)
NCE4503S
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson- Junction Temperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(
Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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NCE4503S
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vth (V) Variance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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