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NTB15N40

Description
N−Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size153KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTB15N40 Overview

N−Channel Power MOSFET

NTB15N40 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionD2PAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)675 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.26 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)202 W
Maximum pulsed drain current (IDM)53 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTP15N40, NTB15N40
Preferred Device
Advance Information
Power MOSFET
15 Amps, 400 Volts
N−Channel TO−220 and D
2
PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
http://onsemi.com
Higher Current Rating
Lower R
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specifications
Avalanche Energy Specified
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
15 AMPERES
400 VOLTS
R
DS(on)
= 260 mΩ
N−Channel
D
Typical Applications
G
4
S
1
Unit
Vdc
Vdc
Vdc
V
GS
V
GSM
I
D
I
D
"20
"40
Adc
Continuous
Continuous @ 100°C
Single Pulse (t
p
v10
μs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature
Range
Single Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 100 V, V
GS
= 10 Vdc,
I
L
= 15 A, L = 6 mH, R
G
= 25
Ω)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Junction−to−Ambient (Note 1.)
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case
for 10 seconds
15
12
53
202
1.61
−55
to 150
675
Watts
W/°C
°C
mJ
Drain
NTP15N40
LLYWW
Gate
Source
Gate
Drain
Source
1
2
TO−220AB
CASE 221A
STYLE 5
3
2
3
D
2
PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MΩ)
Gate−Source Voltage
Continuous
Non−Repetitive (t
p
v10
ms)
Drain
Symbol
V
DSS
V
DGR
Value
400
400
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
Drain
I
DM
P
D
T
J
, T
stg
E
AS
NTB15N40
LLYWW
NTx15N40
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
R
θJC
R
θJA
R
θJA
T
L
0.62
62.5
50
260
°C/W
ORDERING INFORMATION
Device
°C
NTP15N40
NTB15N40
NTB15N40T4
Package
TO−220AB
D
2
PAK
D
2
PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 2
1
Publication Order Number:
NTP15N40/D

NTB15N40 Related Products

NTB15N40 NTB15N40T4 NTP15N40
Description N−Channel Power MOSFET N−Channel Power MOSFET N−Channel Power MOSFET
Is it Rohs certified? incompatible incompatible incompatible
package instruction D2PAK-3 D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code _compli _compli _compli
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 675 mJ 675 mJ 675 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 400 V
Maximum drain current (Abs) (ID) 15 A 15 A 15 A
Maximum drain current (ID) 15 A 15 A 15 A
Maximum drain-source on-resistance 0.26 Ω 0.26 Ω 0.26 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 202 W 202 W 202 W
Maximum pulsed drain current (IDM) 53 A 53 A 53 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker ON Semiconductor - ON Semiconductor

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