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BTS110

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size324KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BTS110 Overview

POWER, FET

BTS110 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)130 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment40 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)160 ns
Maximum opening time (tons)100 ns
TEMPFET
®
BTS 110
Features
q
q
q
q
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
3
1 2
Pin
1
G
2
D
3
S
Type
BTS 110
V
DS
100 V
I
D
10 A
R
DS(on)
0.2
Package
TO-220AB
Ordering Code
C67078-A5008-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 25
°C
ISO drain current
T
C
= 85
°C,
V
GS
= 10 V,
V
DS
= 0.5 V
Pulsed drain current,
Short circuit current,
Symbol
Values
100
100
±
20
10
1.75
40
37
500
40
– 55 ... + 150
E
55/150/56
K/W
3.1
75
°C
W
A
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D-ISO
I
D puls
I
SC
P
SCmax
P
tot
T
j
,
T
stg
T
C
= 25
°C
T
j
= – 55 ... + 150
°C
Short circuit dissipation,
T
j
= – 55 ... + 150
°C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
Semiconductor Group
1
04.97

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