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P4KE75C

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    Transient suppression diode   
File Size417KB,5 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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P4KE75C Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE

P4KE75C Parametric

Parameter NameAttribute value
Case StyleDO-41
Ppk(W)400
MIN_(V)67.50
MAX_(V)82.50
Vwm_(V)60.7
Ir_(uA)1
Ippm_(A)3.70
Vc_(V)108.0
classDiodes
P4KE SERIES
400 Watts Transient Voltage Suppressor Diodes
DO-41
Features
400W surge capability at 10 x 100us
waveform, duty cycle: 0.01%
Excellent clamping capability
Low zener impedance
Fast response time: Typically less than 1.0ps
from 0 volts to VBR for unidirectional and 5.0
ns for bidirectional
Typical I
R
less than 1 uA above 10V
High temperature soldering guaranteed: 260
o
C
/ 10 seconds / .375”,(9.5mm) lead length /
5lbs.,(2.3kg) tension
Mechanical Data
Case: Molded plastic
Polarity: Color band denotes cathode except bipolar
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms (
N
ote 1)
o
Steady State Power Dissipation at T
L
=75
o
C
Lead Lengths .375”, 9.5mm (Note 2)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 3)
Maximum Instantaneous Forward Voltage at 25.0A for
Unidirectional Only (Note 4)
Operating and Storage Temperature Range
Notes:
Symbol
P
PK
P
D
I
FSM
V
F
T
J
, T
STG
Value
Minimum 400
1.0
40
3.5 /5.0
-55 to + 150
o
Units
Watts
Watts
Amps
Volts
o
C
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on Copper Pad Area of 1.6 x 1.6” (40 x 40 mm) Per Fig. 4.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes
Maximum.
4. V
F
=3.5V for Devices of V
BR
200V and V
F
=6.5V Max. for Devices V
BR
>200V
1. For Bidirectional Use C or CA Suffix for Types P4KE6.8 thru Types P4KE440.
2. Electrical Characteristics Apply in Both Directions.
Devices for Bipolar Applications
http://www.luguang.cn
mail:lge@luguang.cn

P4KE75C Related Products

P4KE75C P4KE550 P4KE110C P4KE12CA P4KE22C P4KE400CA P4KE500C P4KE520C
Description 400 W, BIDIRECTIONAL, SILICON, TVS DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL 400 W, BIDIRECTIONAL, SILICON, TVS DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL Transient Voltage Suppressor Transient Voltage Suppressor
Case Style DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Ppk(W) 400 400 400 400 400 400 400 400
MIN_(V) 67.50 495.00 99.00 11.40 19.80 380.00 450.00 468.00
MAX_(V) 82.50 605.00 121.00 12.60 24.20 420.00 550.00 572.00
Vwm_(V) 60.7 446.6 89.2 10.2 17.8 342.0 406.0 422.2
Ir_(uA) 1 1 1 5 1 1 1 1
Ippm_(A) 3.70 0.51 2.53 23.95 12.54 0.72 0.56 0.53
Vc_(V) 108.0 792.0 158.0 16.7 31.9 552.0 720.0 748.8
class Diodes Diodes Diodes Diodes Diodes Diodes Diodes Diodes
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