CYStech Electronics Corp.
Surface Mount Transient Voltage Suppressors
Peak Pulse Power 400W
Breakdown Voltage 6.8 to 550V
Spec. No. : C767SA
Issued Date : 2009.05.19
Revised Date :2010.01.14
Page No. : 1/5
P4SMA6.8A thru P4SMA550CA
Features
•
Low profile package with built-in strain relief for surface mounted
applications
•
Plastic package has UL flammability classification 94V-0
•
Ideal for ESD protection of data line in accordance with IEC1000-4-2
(IEC801-2)
•
Ideal for EFT protection of data line in accordance with IEC1000-4-4
(IEC801-4)
•
Very-fast response time
•
Optimized for LAN protection applications
•
Low incremental surge resistance, excellent clamping capability
•
Glass passivated junction
•
High temperature soldering guaranteed: 250°C/10seconds at
terminals
•
400W peak pulse power capability with a 10/1000μs waveform,
repetition rate (duty cycle) : 0.01% (300W above 91V)
Outline
DO-214AC (SMA)
Mechanical Data
•
Case : JEDEC DO-214AC(SMA) molded plastic body
•
Terminals: Pure tin plated, solderable per MIL-STD-750 method 2026
•
Polarity: For uni-directional types, the band denotes the cathode, which is positive with respective to the anode
under normal TVS operation
•
Mounting position : Any
•
Weight: 0.002 oz., 0.064 gram
Devices for bidirectional applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
(T
A
=25°C, unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000μs waveform
(Fig. 1)
Peak pulse current with a 10/1000μs waveform
(Fig. 3)
Power dissipation on infinite heatsink, T
A
=50°C
Peak forward surge current, 8.3ms single half sine wave
uni-directional only
(Note 2)
Typical thermal resistance, junction-to-leads
Typical thermal resistance, junction-to-ambient
(Note 3)
Operating junction and storage temperature range
2.Mounted on 0.2”×0.2” (5mm×5mm) copper pads to each terminal
3.Mounted on minimum recommended pad layout
P4SMA6.8A thru P4SMA550CA
CYStek Product Specification
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJL
R
θJA
T
J
;T
STG
Value
Minimum 400
(Note 1, 2)
See next table
(Note 1)
1
40
30
120
-55 ~ +150
Unit
W
A
W
A
°C/W
°C/W
°C
Notes: 1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2.
Rating is 300W above 91V.
CYStech Electronics Corp.
Electrical Characteristics
Ratings at 25℃
V
F
=3.5V at I
F
=25A (uni-directional only)
Spec. No. : C767SA
Issued Date : 2009.05.19
Revised Date :2010.01.14
Page No. : 2/5
ambient temperature, unless otherwise noted.
Device
Device
Marking
Code
UNI
BI
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
Breakdown
Voltage
V
(BR)
1
(V)
Min
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
P4SMA6.8A
P4SMA7.5A
P4SMA8.2A
P4SMA9.1A
P4SMA 10A
P4SMA 11A
P4SMA 12A
P4SMA 13A
P4SMA 15A
P4SMA 16A
P4SMA 18A
P4SMA 20A
P4SMA 22A
P4SMA 24A
P4SMA 27A
P4SMA 30A
P4SMA 33A
P4SMA 36A
P4SMA 39A
P4SMA 43A
P4SMA 47A
P4SMA 51A
P4SMA 56A
P4SMA 62A
P4SMA 68A
P4SMA 75A
P4SMA 82A
P4SMA 91A
P4SMA 100A
P4SMA 110A
P4SMA 120A
P4SMA 130A
P4SMA 150A
P4SMA 160A
P4SMA 170A
P4SMA 180A
P4SMA 200A
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
Maximum
Maximum Maximum
Test Standoff reverse Maximum clamping temperature
current voltage leakage at peak pulse voltage at coefficient
V
WM
of
Current
V
WM
at I
T
I
PPM
3
2
V
(BR)
I
D
I
PPM
(mA)
(V)
V
C
Max
(%/°C)
(V)
(μA)
(A)
1000
7.14
10
5.80
57.1
10.5
0.057
7.88
10
6.40
500
53.1
11.3
0.061
8.61
10
7.02
200
49.6
12.1
0.065
9.55
13.4
1.0
7.78
50
44.8
0.068
10.5
14.5
1.0
8.55
10
41.4
0.073
11.6
1.0
9.40
5.0
38.5
15.6
0.075
12.6
1.0
10.2
5.0
35.9
16.7
0.078
13.7
1.0
11.1
5.0
33.0
18.2
0.081
28.3
15.8
1.0
12.8
1.0
21.2
0.084
16.8
1.0
13.6
1.0
26.7
22.5
0.086
18.9
1.0
15.3
1.0
23.8
25.2
0.088
21.0
1.0
17.1
1.0
21.7
27.7
0.090
23.1
1.0
18.8
1.0
19.6
30.6
0.092
25.2
1.0
20.5
1.0
18.1
33.2
0.094
28.4
1.0
23.1
1.0
16.0
37.5
0.096
31.5
1.0
25.6
1.0
14.5
41.4
0.097
34.7
1.0
28.2
1.0
13.1
45.7
0.098
37.8
1.0
30.8
1.0
12.0
49.9
0.099
41.0
1.0
33.3
1.0
11.1
53.9
0.100
1.0
45.2
1.0
36.8
10.1
59.3
0.101
49.4
1.0
40.2
1.0
9.3
64.8
0.101
53.6
1.0
43.6
1.0
8.6
70.1
0.102
58.8
1.0
47.8
1.0
7.8
77.0
0.103
65.1
1.0
53.0
1.0
7.1
85.0
0.104
1.0
1.0
71.4
58.1
6.5
92.0
0.104
1.0
1.0
0.105
78.8
64.1
5.8
103
1.0
1.0
0.105
86.1
70.1
5.3
113
4.8
1.0
1.0
125
0.106
95.5
77.8
1.0
1.0
105
85.5
4.4
137
0.106
1.0
1.0
0.107
116
94.0
3.9
152
1.0
1.0
0.107
126
102
3.6
165
1.0
1.0
0.107
137
111
3.4
179
1.0
1.0
0.108
158
128
2.9
207
1.0
1.0
0.108
168
136
2.7
219
1.0
1.0
0.108
179
145
2.6
234
1.0
1.0
0.108
189
154
2.4
246
1.0
1.0
0.108
210
171
2.2
274
CYStek Product Specification
P4SMA6.8A thru P4SMA550CA
CYStech Electronics Corp.
Electrical Characteristics(Cont.)
Device
Marking
Code
UNI
P4SMA 220A
P4SMA 250A
P4SMA 300A
P4SMA 350A
P4SMA 400A
P4SMA 440A
P4SMA 480A
P4SMA 510A
P4SMA 530A
P4SMA 540A
P4SMA 550A
220A
250A
300A
350A
400A
440A
480A
510A
530A
540A
550A
BI
220C
250C
300C
350C
400C
440C
480C
510C
530C
540C
550C
Breakdown
Voltage
V
(BR)
1
(V)
Min
209
237
285
333
380
418
456
485
503.5
513
522.5
Spec. No. : C767SA
Issued Date : 2009.05.19
Revised Date :2010.01.14
Page No. : 3/5
Device
Maximum
Maximum Maximum
Test Standoff reverse Maximum clamping temperature
current voltage leakage at peak pulse voltage at coefficient
V
WM
of
Current
V
WM
at I
T
I
PPM
3
2
V
(BR)
I
D
I
PPM
(mA)
(V)
V
C
Max
(%/°C)
(V)
(μA)
(A)
1.0
1.0
0.108
231
185
1.8
328
263
1.0
214
1.0
1.7
344
0.108
0.108
315
1.0
256
1.0
1.4
414
0.108
368
1.0
300
1.0
1.2
482
0.108
420
1.0
342
1.0
1.1
548
0.108
462
1.0
376
1.0
1.0
602
0.108
504
1.0
408
1.0
0.9
658
0.108
535
1.0
434
1.0
0.9
698
0.108
556.5
1.0
450
1.0
0.8
725
0.108
567
1.0
459
1.0
0.8
740
0.108
577.5
1.0
495
1.0
0.8
760
Note: 1.V
(BR)
measured after I
T
applied for 300μs, I
T
=square wave pulse or equivalent
2.Surge current waveform per Fig. 3 and derate per Fig.2
3.For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
4.All terms and symbols are consistent with ANSI/IEEE C62.35
P4SMA6.8A thru P4SMA550CA
CYStek Product Specification
CYStech Electronics Corp.
DO-214AC/SMA Dimension
Spec. No. : C767SA
Issued Date : 2009.05.19
Revised Date :2010.01.14
Page No. : 5/5
DO-214AC/SMA Plastic
Surface Mounted Package
CYStek Package Code : SA
*:Typical
DIM
A
B
C
D
Inches
Min.
Max.
0.050
0.064
0.095
0.104
0.157
0.181
0.075
0.089
Millimeters
Min.
Max.
1.27
1.63
2.40
2.65
4.00
4.60
1.90
2.25
DIM
E
F
G
H
Inches
Min.
Max.
0.006
0.012
0.004
0.008
0.031
0.059
0.189
0.205
Millimeters
Min.
Max.
0.15
0.31
0.10
0.20
0.80
1.50
4.80
5.20
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
•
Lead : Pure tin plated
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
P4SMA6.8A thru P4SMA550CA
CYStek Product Specification
Microcontroller MCU
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