PROFET® BTS 307
Smart Highside Power
Switch
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of
V
bb
protection
•
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
V
bb(AZ)
V
bb(on)
R
ON
I
L(ISO)
65
V
5.8 ... 58 V
250 mΩ
1.7
A
TO-220AB/5
5
5
1
Straight leads
1
5
Standard
SMD
• µC
compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
source
V
Logic
Voltage
sensor
3
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
OUT
2
IN
Temperature
sensor
5
ESD
Logic
Load
detection
Short circuit
detection
GND
4
ST
PROFET
Load GND
1
Signal GND
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 12
2003-Oct-01
BTS 307
Pin
1
2
3
4
5
Symbol
GND
IN
Vbb
ST
OUT
(Load, L)
-
I
+
S
O
Function
Logic ground
Input, activates the power switch in case of logical high signal
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback
Output to the load
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection
2)
T
j Start
=-40 ...+150°C
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 5
Symbol
V
bb
V
bb
I
L
T
j
T
stg
P
tot
V
ESD
V
IN
I
IN
I
ST
Values
65
40
self-limited
-40 ...+150
-55 ...+150
50
1.0
tbd (>1.0)
-0.5 ... +36
±2.0
±5.0
Unit
V
V
A
°C
W
kV
V
mA
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case:
R
thJC
junction - ambient (free air):
R
thJA
Values
min
typ max
--
--
2.5
--
--
75
Unit
K/W
2
)
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher V
bb
.
Semiconductor Group
2
2003-Oct-01
BTS 307
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A,
V
bb
= 24 V
T
j
=25 °C:
R
ON
--
1.4
I
L(ISO)
I
L(GNDhigh)
--
220
390
1.7
--
250
500
--
1.1
A
mA
µs
mΩ
T
j
=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=32 V,
V
IN
= 0, see diagram
page 6
Turn-on time to 90%
V
OUT
:
Turn-off time to 10%
V
OUT
:
R
L
= 12
Ω,
V
bb
= 20V,
T
j
=-40...+150°C
Slew rate on, 10 to 30%
V
OUT
,
R
L
= 12
Ω,
V
bb
= 20V,
T
j
=-40...+150°C
Slew rate off, 10 to 30%
V
OUT
,
R
L
= 12
Ω,
V
bb
= 20V,
T
j
=-40...+150°C
Operating Parameters
Operating voltage
3
)
T
j
=-40...+150°C:
Undervoltage shutdown
T
j
=-40...+150°C:
Undervoltage restart
T
j
=-40...+150°C:
Undervoltage restart of charge pump
see diagram page 10
T
j
=-40...+150°C:
Undervoltage hysteresis
∆V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage protection
4
)
T
j
=-40...+150°C:
I
bb
=40 mA
Standby current (pin 3)
,
V
IN
=0
T
j
=-40...+150°C:
Operating current (Pin 1)
5
)
,
V
IN
=5 V
t
on
t
off
dV /dt
on
-dV/dt
off
15
20
--
--
--
--
--
--
80
70
6
7
V/µs
V/µs
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆V
bb(under)
V
bb(AZ)
I
bb(off)
I
GND
5.8
2.7
--
--
--
65
--
--
--
5.6
0.4
70
58
4.7
4.9
7.5
--
--
V
V
V
V
V
V
µA
--
--
10
2.2
50
--
mA
3
)
)
4
)
5
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
≈V
bb
- 2 V
See also
V
ON(CL)
in table of protection functions and circuit diagram page 6.
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
Semiconductor Group
3
2003-Oct-01
BTS 307
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
6
)
Initial peak short circuit current limit (pin 3 to 5)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 1 A,
T
j
=-40..+150°C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
7
)
Diagnostic Characteristics
Open load detection current
(included in standby current
I
bb(off)
)
I
L(SCp)
--
--
4.0
V
ON(CL)
T
jt
∆
T
jt
-V
bb
59
150
--
--
--
10
--
--
--
10
--
19
--
--
75
--
--
32
A
V
°C
K
V
I
L(off)
T
j
=-40..150°C:
V
OUT(OL)
V
ON(SC)
--
2.4
--
6
3
2.5
--
4
--
µA
V
V
Open load detection voltage
Short circuit detection voltage
(pin 3 to 5)
Input and Status Feedback
8
)
Input resistance
see circuit page 5
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V
On state input current (pin 2),
V
IN
= 3.5? V
Delay time for status with open load
after Input neg. slope (see diagram page 10)
R
I
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL3)
--
1
0.8
--
1
10
--
20
--
--
0.5
--
25
200
--
2.5
--
--
30
70
--
kΩ
V
V
V
µA
µA
µs
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
V
ST(high)
ST low voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
V
ST(low)
5.4
--
6.1
--
--
0.4
V
6
)
7
)
8
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Requires 150
Ω
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
Semiconductor Group
4
2003-Oct-01
BTS 307
Truth Table
Input-
level
Normal
operation
Open load
Short circuit
to GND
Short circuit
to V
bb
Overtem-
perature
Under-
voltage
Overvoltage
L = "Low" Level
H = "High" Level
Output
level
Status
BTS 307
BTS 707
L
L
L
H
H
H
9
)
L
H
H
H
H
L
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
L
L
L
L
L
H
L
L
no overvoltage shutdown,
see normal operation
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 10)
Terms
Ibb
I IN
2
I ST
V
V
bb
IN
VST
4
ST
GND
1
R
GND
IGND
VOUT
IN
3
Vbb
IL
PROFET
OUT
5
VON
Status output
+5V
R
ST(ON)
ST
GND
ESD-
ZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 0
Ω
at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).
Input circuit (ESD protection)
R
IN
I
Short circuit detection
Fault Signal at ST-Pin:
V
ON
> 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
+ V bb
ESD-ZD
I
GND
I
I
V
ON
OUT
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Logic
unit
Short circuit
detection
9
)
Power Transistor off, high impedance, internal pull up current source for open load detection.
Semiconductor Group
5
2003-Oct-01
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