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Q65110A2701

Description
PHOTO DIODE
CategoryLED optoelectronic/LED   
File Size147KB,9 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
Download Datasheet Parametric Compare View All

Q65110A2701 Overview

PHOTO DIODE

Q65110A2701 Parametric

Parameter NameAttribute value
stateACTIVE
Optoelectronic device typePHOTO DIODE
Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing
Silicon PIN Photodiode; in SMT and as Reverse Gullwing
Lead (Pb) Free Product - RoHS Compliant
BPW 34, BPW 34 S, BPW 34 SR
BPW 34
BPW 34 S
BPW 34 SR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BPW 34 S/BPW 34 SR: geeignet für Reflow
Löten
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34
BPW 34 S
BPW 34 SR
Bestellnummer
Ordering Code
Q62702P0073
Q65110A1209
Q65110A2701
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
• BPW 34 S/BPW 34 SR: suitable for reflow
soldering
Applications
Photointerrupters
IR remote controls
Industrial electronics
For control and drive circuits
Fotostrom,
E
v
=1000 lx, standard light A,
V
R
= 5 V
Photocurrent
Ip (
µ
A)
80 (≥50)
80 (≥50)
80 (≥50)
2007-05-23
1

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