Preliminary
Datasheet
RJK4002DJE
400V - 3A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 2.4
typ. (at I
D
= 1.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0842EJ0200
Rev.2.00
Aug 03, 2012
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Source
2. Drain
3. Gate
32
S
1
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
Value at Tc = 25C
STch = 25C, Tch
150C
Pulse width limited by safe operating area.
Symbol
V
DSS
V
GSS
I
D Note1
I
D(pulse) Note4
I
DR Note1
I
DR(pulse) Note4
I
APNote3
E
ARNote3
Pch
ch-a
Tch
Tstg
Note 2
Value
400
30
3
6
3
6
2.5
0.357
2.54
49.2
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 1 of 6
RJK4002DJE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
400
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.4
165
25
2.6
11
12
23
20
6.0
1.2
3.4
0.9
200
Max
—
1
0.1
4.5
2.9
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 10 V
Note 5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 1.5 A
V
GS
= 10 V
R
L
= 133
Rg = 10
V
DD
= 320 V
V
DS
= 100 V
I
D
= 3 A
I
F
= 3 A, V
GS
= 0
Note 5
I
F
= 3 A, V
GS
= 0
di
F
/dt = 100 A/s
5. Pulse test
6. Since this device is equipped with high voltage FET chip (V
DSS
400
V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
7. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 2 of 6
RJK4002DJE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
5
Ta = 25°C
Pulse Test
6.2 V
7V
10 V
6V
3
5.8 V
5.6 V
5.4 V
1
0
0
4
8
12
16
20
5.2 V
V
GS
= 5 V
6.4 V
Typical Output Characteristics
I
D
(A)
Drain Current
1000
I
D
(A)
10
PW
=
10
10
μ
s
4
1
0
Drain Current
μ
s
0.1
0.01
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
2
0.001
0.1
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
1
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
10
Drain Current
I
D
(A)
0.1
Tc = 75°C
25°C
−25°C
1
0.01
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
0.1
1
10
0.001
0
2
4
6
8
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
8
6
I
D
= 3 A
100
4
1.5 A
2
0
−25
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 3 of 6
RJK4002DJE
Typical Capacitance vs.
Drain to Source Voltage
V
DS
(V)
1000
V
GS
= 0
f = 1 MHz
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 3 A
Ta = 25°C
Capacitance C (pF)
Ciss
100
600
12
V
DD
= 100 V
200 V 8
320 V
Drain to Source Voltage
400
V
DS
10
Coss
200
Crss
Tc = 25°C
1
0
40
80
120
160
200
V
DD
= 320 V
200 V
100 V
2
4
6
8
4
0
0
0
10
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
5.0
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
4
V
GS
= 0
Ta = 25°C
Pulse Test
4.5
4.0
3.5
1 mA
3.0
2.5
V
DS
= 10 V
2.0
-25
0
25
I
D
= 10 mA
Reverse Drain Current
3
2
1
0
0
0.4
0.8
1.2
1.6
2.0
0.1 mA
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
800
V
GS
16
RJK4002DJE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
Preliminary
0.1
0.1
0.05
0.02
0.01
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 49.2°C/W, Tc = 25°C
uls
e
0.01
1
tp
sho
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0842EJ0200 Rev.2.00
Aug 03, 2012
Page 5 of 6
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