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SI6463DQ

Description
P-Channel 2.5V Specified PowerTrench MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size92KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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SI6463DQ Overview

P-Channel 2.5V Specified PowerTrench MOSFET

SI6463DQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTSSOP
package instructionTSSOP-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)8.8 A
Maximum drain current (ID)8.8 A
Maximum drain-source on-resistance0.0125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Si6463DQ
April 2001
Si6463DQ
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
–8.8 A, –20 V. R
DS(ON)
= 0.0125
@ V
GS
= –4.5 V
R
DS(ON)
= 0.018
@ V
GS
= –2.5 V
Extended V
GSS
range (±12V) for battery
applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
Applications
Load switch
Motor drive
DC/DC conversion
Power management
D
S
S
D
G
S
S
D
5
6
7
8
Pin 1
4
3
2
1
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±
12
(Note 1)
Units
V
V
A
W
°C
–8.8
–50
1.3
0.6
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
208
°C/W
Package Marking and Ordering Information
Device Marking
6463
Device
Si6463DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si6463DQ Rev. A(W)
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