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BTS430K2

Description
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size120KB,13 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BTS430K2 Overview

Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)

BTS430K2 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Built-in protectionOVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
Input propertiesSCHMITT TRIGGER
Interface integrated circuit typeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 codeR-PSFM-T5
Number of functions1
Number of terminals5
Output characteristicsOPEN-SOURCE
Output current flow directionSOURCE
Nominal output peak current36 A
Output polarityTRUE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum supply voltage32 V
Minimum supply voltage4.5 V
Nominal supply voltage12 V
surface mountNO
technologyMOS
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Disconnect time60 µs
connection time260 µs
PROFET® BTS 430 K2
Smart Highside Power Switch
Clamp of negative voltage at output
V
bb
-V
OUT
Avalanche
Short-circuit protection
V
bb (operation)
Current limitation
V
bb (reverse)
Thermal shutdown
R
ON
Diagnostic feedback
I
L(lim)
Open load detection in ON-state
I
L(ISO)
CMOS compatible input
Electrostatic Discharge
(ESD) protection
Loss of ground and loss of V
bb
protection
1)
Reverse battery protection
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Features
Product Summary
Clamp
50
4.5 ... 32
-32
38
36
11
V
V
V
mΩ
A
A
Application
• µC
compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic fault
feedback, integrated in Smart SIPMOS
®
chip on chip technology. Fully protected by embedded protection
functions.
R bb
+ V bb
3
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
V
Logic
Voltage
sensor
Charge pump
Level shifter
Rectifier
Open circuit
ESD
Logic
detection
Limit for
unclamped
ind. loads
OUT
2
IN
Temperature
sensor
5
Load
4
ST
Short circuit
detection
GND
®
PROFET
Load GND
1
Signal GND
1)
Additional external diode required for charged inductive loads
Semiconductor Group
1
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