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SI4505DY-T1

Description
N- and P-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size278KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SI4505DY-T1 Overview

N- and P-Channel MOSFET

SI4505DY-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codecompli
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Si4505DY
Vishay Siliconix
N- and P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
P-Channel
30
-8
R
DS(on)
(Ω)
0.018 at V
GS
= 10 V
0.027 at V
GS
= 4.5 V
0.042 at V
GS
= - 4.5 V
0.060 at V
GS
= - 2.5 V
I
D
(A)
7.8
6.4
- 5.0
- 4.0
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift
• Load Switch
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4505DY-T1-E3 (Lead (Pb)-free)
Si4505DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
S
2
S
1
D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2
1.3
7.8
6.0
30
1.0
1.20
0.75
- 55 to 150
- 1.8
2
1.3
10 s
Steady State
30
± 20
6.0
5.2
- 5.0
- 3.6
- 30
- 1.0
1.2
0.75
W
°C
P-Channel
10 s
Steady State
-8
±8
- 3.8
- 3.0
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
b. t
10 s.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
50
85
30
Max.
62.5
105
40
50
85
30
P-Channel
Typ.
Max.
62.5
105
40
°C/W
Unit
Document Number: 71826
S09-0868-Rev. C, 18-May-09
www.vishay.com
1

SI4505DY-T1 Related Products

SI4505DY-T1 SI4505DY
Description N- and P-Channel MOSFET N- and P-Channel MOSFET
Is it Rohs certified? incompatible incompatible
Maker Vishay Vishay
Reach Compliance Code compli compli
Maximum drain current (Abs) (ID) 6 A 6 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W
surface mount YES YES
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