, O
ne,
TIP31, TIP31A, TIP31B, TIP31C,
(NPN), TIP32, TIP32A, TIP32B,
TIP32C, (PNP)
TELEPHONE: (973)
FAX: (973)
376-2922
376-8960
(212)227-6005
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• Col lector-Emitter Saturation Voltage-
VcE(sat) = 1-2 Vdc (Max) @ I
c
= 3.0 Adc
• Collector-Emitter Sustaining Voltage -
VCEO(SUS) = 40 Vdc (Min) - T1P31, TIP32
= 60 Vdc (Min) - TIP31 A, T1P32A
= 80 Vdc (Min) - TIP31B, TIP32B
= 100 V d c ( M i n ) - T I P 3 1 C , TIP32C
• High Current Gain - Bandwidth Product
f
T
=3.0 MHz (Min) @ I
c
= 500 mAdc
• Compact TO-220 AB Package
• Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage TIP31 , TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector-Base Voltage
TIP31 , TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Continuous
Peak
Symbol
V
CEO
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40-60-80-100 VOLTS,
40 WATTS
MARKING
DIAGRAM
O
TO-220AB
Value
40
60
80
100
40
60
80
100
5.0
3.0
5.0
1.0
40
0.32
Unit
Vdc
TIPSxxG
AYWW
VCB
Vdc
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@T
C
= 25'C
Derate above 25° C
Total Power Dissipation
@T
A
= 25°C
Derate above 25°C
Undamped Inductive Load Energy (Note 1 )
Operating and Storage Junction
Temperature Range
VEB
Ic
IB
PD
Vdc
Adc
Adc
W
W/°C
W
W/°C
mJ
°C
PD
2.0
0.016
E
32
Tj.
T
stg
-65to
+ 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. l
c
= 1.8 A, L = 20mH, P.R.F. = 10 Hz, V
c
c = 10V, R
BE
= 100 Q
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to- Case
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 2)
(l
c
= 30 mAdc, I
B
= 0)
TIP31 , TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
TIP31, TIP32, TIP31A, TIP32A
TIP31 B, TIP31C, TIP32B, TIP32C
!CES
v
CEO(sus)
Symbol
RBJA
RBJC
Max
62.5
3.125
Unit
°C/W
°c/w
Max
Symbol
Min
40
60
80
100
~
Unit
Vdc
-
Collector Cutoff Current (V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 60 Vdc, IB = 0)
Collector Cutoff Current
(V
CE
= 40 Vdc, V
EB
= 0)
(VCE = 60 Vdc, V
EB
= 0)
(V
CE
= 80 Vdc, V
EB
= 0)
(V
CE
= 100 Vdc, V
EB
= 0)
Emitter Cutoff Current (V
BE
= 5.0 Vdc, IQ = 0)
ON CHARACTERISTICS
(Note 2)
DC Current Gain (l
c
= 1 .0 Adc, V
CE
= 4.0 Vdc)
(l
c
= 3.0 Adc, V
CE
= 4.0 Vdc)
ICEO
0.3
0.3
mAdc
nAdc
TIP31, TIP32
TIP31A, TIP32A
TIP31 B, TIP32B
TIP31C, TIP32C
'EBO
HFE
V
CE(sat)
-
-
25
10
-
-
200
200
200
200
1.0
mAdc
-
50
1.2
1.8
Collector-Emitter Saturation Voltage (l
c
= 3.0 Adc, I
B
= 375 mAdc)
Base-Emitter On Voltage (l
c
= 3.0 Adc, V
C
E = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (l
c
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Small-Signal Current Gain (l
c
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width
s
300 us, Duty Cycle < 2.0%.
Vdc
Vdc
MHz
-
VBE(on)
f
T
hfe
3.0
20
-
-
PCB Design
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