The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled
lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA
holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM
are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
Device
TISP4xxxJ3BJ
Package
SMB (DO-214AA)
Carrier
Embossed Tape Reeled
Order As
TISP4xxxJ3BJR-S
Marking Code
4xxxJ3
Std. Qty.
3000
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
Symbol
Value
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
±1000
±800
±400
±370
±350
±350
±250
±200
50
800
-40 to +150
-65 to +150
U nit
Repetitive peak off-state voltage
V
DRM
V
Non-repetitive peak impulse current (see Notes 1 and 2)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
4/250 µs (ITU-T K.20/21, 10/700 µs voltage waveshape, simultaneous)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape, single)
5/320 µs (TIA-968-A, 9/720 µs voltage waveshape, single)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms, 50 Hz (full sine wave)
Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A
Junction temperature
Storage temperature range
I
TSM
di
T
/dt
T
J
T
stg
A
A/µs
°C
°C
I
PPSM
A
NOTES: 1. Initially the device must be in thermal equilibrium with T
J
= 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak
off-state current
V
D
= V
DRM
Test Conditions
T
A
= 25 °C
T
A
= 85 °C
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
Min
Typ Max
±5
±10
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
Unit
µA
V
(BO)
AC Breakover voltage
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
V
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
‘4070J3BJ
‘4080J3BJ
‘4095J3BJ
‘4115J3BJ
‘4125J3BJ
‘4145J3BJ
‘4165J3BJ
‘4180J3BJ
‘4200J3BJ
‘4219J3BJ
‘4250J3BJ
‘4290J3BJ
‘4350J3BJ
‘4395J3BJ
‘4070J3BJ thru ‘4115J3BJ
I
(BO)
I
H
dv/dt
I
D
Breakover current
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
I
T
= ±5 A, di/dt = ±30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 1 MHz, V
d
= 1 V rms, V
D
= 0
T
A
= 85 °C
‘4070J3BJ thru ‘4115J3BJ
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
‘4070J3BJ thru ‘4115J3BJ
f = 1 MHz, V
d
= 1 V rms, V
D
= -1 V
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
C
O
Off-state capacitance
‘4070J3BJ thru ‘4115J3BJ
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
‘4070J3BJ thru ‘4115J3BJ
f = 1 MHz, V
d
= 1 V rms, V
D
= -50 V
f = 1 MHz, V
d
= 1 V rms, V
D
= -100 V
(see Note 3)
NOTE:
3. To avoid possible clipping, the TISP4125J3BJ is tested with V
D
= -98 V.
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
195
120
105
180
110
95
165
100
90
85
50
42
40
35
‘4125J3BJ thru ‘4219J3BJ
‘4250J3BJ thru ‘4395J3BJ
±150
±5
±10
235
145
125
215
132
115
200
120
105
100
60
50
50
40
pF
Min
Typ Max
±77
±88
±104
±125
±135
±156
±177
±192
±212
±231
±263
±303
±364
±409
±900
±800
±600
±600
mA
kV/µs
µA
mA
Unit
V
(BO)
Ramp breakover voltage
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
V
Thermal Characteristics
Parameter
R
θJA
NOTE:
Junction to ambient thermal resistance
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 4)
Mi n
Typ
Max
90
U nit
°C/W
4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
I
TRM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
(BO)
I
(BO)
V
(BR)
I
(BR)
V
DRM
V
(BR)M
+v
I
DRM
V
(BO)
V
T
I
T
I
TRM
Quadrant III
Switching
Characteristic
-i
I
TSM
I
PPSM
PM-TISP4xxx-001-a
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
V
D
= ±50 V
TC4JAG
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4JAF
Normalized Breakover Voltage
10
|I
D
| - Off-State Current - µA
1.10
1
1.05
0·1
1.00
0·01
0.95
0·001
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
0.90
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
Figure 2.
Figure 3.
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4JAD
1
0.9
Capacitance Normalized to V
D
= 0
0.8
0.7
0.6
0.5
0.4
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4JABB
T
J
= 25 °C
V
d
= 1 Vrms
1.5
Normalized Holding Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
0.3
0.2
0.5
1
2
3
5
10
20 30 50
V
D
- Off-state Voltage - V
100 150
Figure 4.
Figure 5.
JULY 2003 - REVISED NOVEMBER 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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