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US2J

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size585KB,3 Pages
ManufacturerYenyo Technology Co., Ltd.
Websitehttp://www.yenyo.com.tw/
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US2J Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

YENYO
Surface Mount Ultra Fast Recovery Rectifier
Voltage Range 50 to 1000 V
Current 2.0 Ampere
SMB/DO-214AA
US2A THRU US2M
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakge current
High surge current capability
Glass passivated chip
Mechanical Data
Case: Molded plastic SMB/DO-214AA
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-750
method 2026
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 0.093 gram
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.083(2.13)
.096(2.44)
.002(.051)
.008(.203)
.200(5.08)
.220(5.59)
.030(0.76)
.060(1.52)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMTER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
A
=90
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 2.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
IF
(AV)
US2A
50
35
50
US2B
100
70
100
US2D
200
140
200
US2G
400
280
400
2.0
US2J
600
420
600
US2K
800
560
800
US2M UNIT
1000
700
1000
V
V
V
A
I
FSM
60
A
V
F
I
R
Trr
C
J
R
JA
T
J
, T
STG
1.0
1.3
5.0
100
50
50
55
-55 to +150
1.7
V
uA
uA
nS
pF
o
75
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to ambient.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
1/2
R1, MAY-12

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US2J US2A US2B US2D US2G US2K US2M
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 1000 V, SILICON, RECTIFIER DIODE

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