US2A
-
US2M
50V-1000V
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
2.0A
Features
•
•
•
•
•
Plastic package has UL flammability
Classification 94V-0
Glass Passivated chip junction
Built in strain relief
Fast switching speed for high efficiency
High temperature soldering guaranteed:
250 /10 seconds
DO-214AA(SMA)
Mechanical Data
•
•
•
•
Case: JEDED DO-214AA transfer molded plastic
Terminals: Solder plated, Solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounce, 0.093 gram
Maximum Ratings & Thermal Characteristics
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
Typical thermal resistance
Ratings at 25℃ ambient temperature unless otherwise specified.
US2A US2B US2D US2G US2J
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50
50
600
420
600
US2K US2M
800
560
800
1000
700
1000
Unit
V
V
V
A
A
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj, TSTG
Operating junction and storage temperature range
-55 --- +150
℃
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbols
I
F
=2.0A
Maximum forward voltage
Maximum reverse current
MAX. Reverse Recovery Time
US2A US2B US2D US2G US2J
1.0
1.3
10
500
50
15
US2K US2M
1.7
Unit
V
μA
V
F
I
R
trr
C
j
TA= 25℃
TA= 125℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
75
nS
pF
V
R
= 4.0V, f = 1MHz
Type junction capacitance
MAKO Semiconductor Co., Limited
www.makosemi.hk
1 of 2
US2A
-
US2M
50V-1000V
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
2.0A
Fig.1
TYPICAL FORWARD CHARACTERISTIC
10
I
F
Instantaneous Forward Current (A)
Fig.2
FORWARD CURRENT DERATING CURVE
I
F(A)
Average Forward Rectified Current (A)
2.4
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75 100 125 150 175
°C
Tamb, ambient temperature (°C)
FIG.4-TYPICAL JUNCTION CAPACITANCE
2
1
US2A thru
US2D
F
0.2
0.1
US2G
US2J thru US2M
0.01
0.8
Tj = 25 °C
1.0
1.2
1.4
F
1.6
1.8
V
F
Instantaneous Forward Voltage (V)
Fig.3
I
INSTANTANEOUS REVERSE CURRENT,
(μA)
100
-TYPICAL REVERSE
CHARACTERISTICS
JUNCTION CAPACITANCE,(pF)
100
US
2A
-U
S2
G
10
US2
10
J -U
S 2M
T
J
=100 C
1.0
T
J
=25
T
J
=25 C
f=1MHz
Vsig=50mVp-p
1
0.1
0
20
40
60
80
100
120
140
0.1
1.0
10
100
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
F1G.5-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
Trr
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
(-)
(+)
25 Vdc
(approx.)
(-)
D.U.T.
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
+0.5A
0
-0.25A
1Ω
NON
INDUCTIVE
-1.0A
1cm
MAKO Semiconductor Co., Limited
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 magohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
SET TIME BASE FOR
50/100ns/cm
www.makosemi.hk
2
Sensor
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