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SGSP317

Description
N-CHANNEL POWER MOS TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size2MB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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SGSP317 Overview

N-CHANNEL POWER MOS TRANSISTORS

SGSP317 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.75 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Reach Compliance Code _compli compli compli _compli compli compli
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